[1] [1] Civis S, Horka V, Simecek T, et al. GaSb basedlasers operating near 2-3 m for high resolution absorption spectroscopy[J]. Spectrochim Acta: Part A, 2005, 61: 3066.

[2] [2] Hosoda T, Feng T, Shterengas L, et al. High power cascade diode lasers emitting near 2m[J]. Appl. Phys. Lett., 2016, 108: 1311109.

[3] [3] Zhang H I, Callaway J. Energy-band structure and optical properties of GaSb[J]. Phys. Rev., 1969, 181: 1163.

[4] [4] Ahmed R, Fazal E A, Hashemifar S J, et al. Physical properties of Ⅲ-antiminodes: a first principles study[J]. Commun Theor Phys, 2009, 52(1): 527-534.

[5] [5] Schottky W F, Bever M B. On the thermodynamic properties of the Ⅲ-Ⅴcompouns InSb, GaSb, and InAs[J]. Acta Metallurg, 1958, 6: 320.

[6] [6] Milnes A G, Polyakov A Y. Gallium antimonide device related properties[J]. Solid State Electron, 1993, 36: 803.

[7] [7] Wei Y, Gin A, Razaghi M, et al. Advanced InAs /GaSb superlattice photovoltaic detectors for very long wavelength infrared app; ocations[J]. Appl. Phys. Lett., 2002, 80: 3262.

[9] [9] Guo J, Peng Z Y, Sun W G, et al. InAs/GaSb superlattices for photodetection in short wavelength infrared range[J]. Infrared Physics and Technology, 2009, 52(4): 124-126.

[10] [10] Beenneett B, Soref R. Electro refration and delectroabsorption in InP, GaAs, GaSb, InAs and InSb[J]. IEEE J Quantum Elect, 1987, 23: 2159-2166.

[11] [11] Aspenes D E, Studna A A. Dielectric functions and optical parameters of Si, GaP, GaAs, GaSb, InP, InAs, and InSb from 15 to 60 eV[J]. Phys. Rev. B., 1983, 27: 985-1009.

[12] [12] Rothmayr F, Pfenning A, Kistner C, et al. Mid-infrared GaSb-based resonant tunneling diode photodetectors for gas sensing applications[J]. Appl. Phys. Lett., 2018, 112: 161107.