Undoped GaSb material exhibits P-type characteristic, which limits its application of GaSb materials in the fields such as InAs/GaSb superlattice infrared detectors. The theoretical basis for estimating superlattice carrier concentration and growing superlattice substrate, buffer layer and electrode contact layer can be provided by exploring the electrical properties of N-type GaSb films. Te doping can achieve the preparation of N-type GaSb films by suppressing GaSb intrinsic defects. Molecular Beam Epitaxy technology is used to get the doped GaSb films which are grown on GaSb substrate and GaAs substrate at different GaTe source temperatures. GaTe source temperatures are set at 420 ℃, 450 ℃ and 480 ℃, respectively, and the electrical characteristic of GaSb films are investigated by Hall test. In the Hall test at 77K, it is found that all GaSb films grow on the GaAs substrate showing N-type semiconductors, with carrier concentration increasing with source temperature. Compared with the undoped GaSb, carrier concentration and the mobility at 420 ℃ and 450 ℃ due to impurity scattering caused by the increase in carrier concentration, and increases with temperature, but at 480 ℃, the mobility decreases considerably due to the decrease in defect density. A 7000 Å Be-doped GaSb buffer layer is grown on a GaSb substrate, followed by a 5000 Å Te-doped GaSb film. The results show that due to the presence of P-type buffer layer, the film appears as a P-type semiconductor when the source temperature is 420 ℃, the presence of hole carriers increases the overall carrier concentration of the film, but the compensation of holes and electrons significantly reduces the mobility. When the source temperature is 450 ℃ and 480 ℃, the film is still N-type semiconductor, and the carrier concentration which is 2~3 times that of GaSb film grown on GaAs substrate increases with temperature. The mobility is highest at 450 ℃ and decreases at 480 ℃. Setting the GaTe source temperature at 450℃ with higher carrier concentration and higher mobility of GaSb thin films involved in the preparation of superlattice materials can make the best effect of the whole material.