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Frontiers of Optoelectronics, Volume. 11, Issue 4, 400(2018)

Temperature dependence simulation and characterization for InP/InGaAs avalanche photodiodes

Yanli ZHAO1、*, Junjie TU1, Jingjing XIANG2, Ke WEN1, Jing XU1, Yang TIAN1, Qiang LI1, Yuchong TIAN1, Runqi WANG1, Wenyang LI1, Mingwei GUO1, Zhifeng LIU3, and Qi TANG3
Author Affiliations
  • 1Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China
  • 2Sichuan Branch, China Unicom Network Communications Co., Ltd, Chengdu 610041, China
  • 3Wuhan Aroptics-Tech Co., LTD, Wuhan 430074, China
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    Yanli ZHAO, Junjie TU, Jingjing XIANG, Ke WEN, Jing XU, Yang TIAN, Qiang LI, Yuchong TIAN, Runqi WANG, Wenyang LI, Mingwei GUO, Zhifeng LIU, Qi TANG. Temperature dependence simulation and characterization for InP/InGaAs avalanche photodiodes[J]. Frontiers of Optoelectronics, 2018, 11(4): 400

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    Paper Information

    Category: RESEARCH ARTICLE

    Received: May. 29, 2018

    Accepted: Sep. 20, 2018

    Published Online: Jan. 10, 2019

    The Author Email: Yanli ZHAO (yanlizhao@hust.edu.cn)

    DOI:10.1007/s12200-018-0851-8

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology