Optoelectronic Technology, Volume. 40, Issue 1, 28(2020)
Study of Crystallographic Morphology and OTFT Properties of C8⁃BTBT Thin Films
Figures & Tables(8)
Fig. 3. Polarizing microscope and atomic force microscope (AFM) images of C8-BTBT thin films prepared by various processes
Fig. 4. Polarizing microscope images of solution-processed C8-BTBT films (top: dip-coating, bottom: ink-jet printing) after annealing at different temperatures for 10 min
Fig. 5. XRD patterns of C8-BTBT thin films prepared by 3 various processes
Fig. 6. XRD patterns of solution-processed C8-BTBT films after annealing at different temperatures for 10 mins
Fig. 7. Transferring characteristics of bottom-contact device with different processes
Table 1. Device parameters of OTFT devices with different processes
View tableView in ArticleTable 1. Device parameters of OTFT devices with different processes
工艺 /（cm2· V-1·s-1）
I on/I offV T/V
SS /(V·decade-1)
N tr/cm-2
提拉 0.025 370 -16.0 12.5 1.3×1013 打印 0.624 2×103 -39.7 5.56 5.9×1012 蒸镀 5.440 5×106 -30.0 3.85 4.0×1012 打印(@60 ℃) 0.002 76 -39.2 / / 打印(@80 ℃) 2×10-4 2 -35.0 / / 打印(@100 ℃) 4×10-4 2.5 -30.5 / /
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Lingling HUANG, Xingfu CHEN, Peng HU, Bo LI, Xianghua WANG, Juntao HU. Study of Crystallographic Morphology and OTFT Properties of C8⁃BTBT Thin Films[J]. Optoelectronic Technology, 2020, 40(1): 28
Paper Information
Category: Research and Trial-manufacture
Received: Sep. 4, 2019
Accepted: --
Published Online: Apr. 26, 2020
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