Plasmonic omni-directional reflective pads for enhanced light extraction in sub-250 nm deep-ultraviolet light-emitting diodes

Wenyu Kang; Shilin Liu; Xiaofang Ye; Yang Chen; Wei Jiang; Jinchai Li; Kai Huang; Jun Yin; Junyong Kang

doi:10.1364/PRJ.551615

Photonics Research, Volume. 13, Issue 4, 1094(2025)

Plasmonic omni-directional reflective pads for enhanced light extraction in sub-250 nm deep-ultraviolet light-emitting diodes

Wenyu Kang1,†... Shilin Liu1,†, Xiaofang Ye, Yang Chen, Wei Jiang, Jinchai Li, Kai Huang, Jun Yin* and Junyong Kang |Show fewer author(s)

Author Affiliations

Pen-Tung Sah Institute of Micro-Nano Science and Technology, Engineering Research Center of Micro-Nano Optoelectronic Materials and Devices, Ministry of Education, College of Physical Science and Technology, Tan Kah Kee Innovation Laboratory (FDIX), Xiamen University, Xiamen 361005, China

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References(39)

[1] J. Lang, F. Xu, J. Wang. Progress in performance of AlGaN-based ultraviolet light emitting diodes. Adv. Electron. Mater., 11, 2300840(2024).

[2] M. Kneissl, T.-Y. Seong, J. Han. The emergence and prospects of deep-ultraviolet light-emitting diode technologies. Nat. Photon., 13, 233-244(2019).

[3] M. H. Memon, H. Yu, Y. Luo. A three-terminal light emitting and detecting diode. Nat. Electron., 7, 279-287(2024).

[4] P. Zwicker, J. Schleusener, S. B. Lohan. Application of 233 nm far-UVC LEDs for eradication of MRSA and MSSA and risk assessment on skin models. Sci. Rep., 12, 2587(2022).

[5] G. Matafonova, V. Batoev. Recent advances in application of UV light-emitting diodes for degrading organic pollutants in water through advanced oxidation processes: a review. Water Res., 132, 177-189(2018).

[6] J. Ruschel, J. Glaab, N. Susilo. Reliability of UVC LEDs fabricated on AlN/sapphire templates with different threading dislocation densities. Appl. Phys. Lett., 117, 241104(2020).

[7] Y. Taniyasu, M. Kasu. AlGaN/GaN high-electron mobility transistors with low thermal resistance grown on single-crystal diamond (111) substrates by metalorganic vapor-phase epitaxy. Appl. Phys. Lett., 98, 131910(2011).

[8] H. Sun, S. Mitra, R. C. Subedi. Unambiguously enhanced ultraviolet luminescence of AlGaN wavy quantum well structures grown on large misoriented sapphire substrate. Adv. Funct. Mater., 29, 1905445(2019).

[9] J. Li, N. Gao, D. Cai. Multiple fields manipulation on nitride material structures in ultraviolet light-emitting diodes. Light Sci. Appl., 10, 129(2021).

[10] K. B. Nam, M. L. Nakarmi, J. Li. Mg acceptor level in AlN probed by deep ultraviolet photoluminescence. Appl. Phys. Lett., 83, 878-880(2003).

[11] H. Yu, M. H. Memon, D. Wang. AlGaN-based deep ultraviolet micro-LED emitting at 275 nm. Opt. Lett., 46, 3271-3274(2021).

[12] M. Tian, H. Yu, M. H. Memon. Enhanced light extraction of the deep-ultraviolet micro-LED via rational design of chip sidewall. Opt. Lett., 46, 4809-4812(2021).

[13] Y. Gao, Q. Chen, S. Zhang. Dual-mode sensor and actuator to learn human-hand tracking and grasping. IEEE Trans. Electron. Dev., 66, 2992-2996(2019).

[14] Y. Kashima, N. Maeda, E. Matsuura. High external quantum efficiency (10%) AlGaN-based deep-ultraviolet light-emitting diodes achieved by using highly reflective photonic crystal on p-AlGaN contact layer. Appl. Phys. Exp., 11, 012101(2018).

[15] N. Maeda, M. Jo, H. Hirayama. Improving the efficiency of AlGaN Deep-UV LEDs by using highly reflective Ni/Al p-type electrodes. Phys. Status Solidi A, 215, 1700435(2018).

[16] N. Maeda, J. Yun, M. Jo. Enhancing the light-extraction efficiency of AlGaN deep-ultraviolet light-emitting diodes using highly reflective Ni/Mg and Rh as p-type electrodes. Jpn. J. Appl. Phys., 57, 04FH08(2018).

[17] X. Peng, W. Guo, H. Xu. Significantly boosted external quantum efficiency of AlGaN-based DUV-LED utilizing thermal annealed Ni/Al reflective electrodes. Appl. Phys. Express, 14, 072005(2021).

[18] H. Yu, M. H. Memon, H. Jia. Deep-ultraviolet LEDs incorporated with SiO₂-based microcavities toward high-speed ultraviolet light communication. Adv. Opt. Mater., 10, 2201738(2022).

[19] D. Lee, J. W. Lee, J. Jang. Improved performance of AlGaN-based deep ultraviolet light-emitting diodes with nano-patterned AlN/sapphire substrates. Appl. Phys. Lett., 110(2017).

[20] R.-H. Horng, Y.-C. Lai, L.-H. Lai. Deep-ultraviolet LEDs fabricated by nanoimprinting. ECS J. Solid State Sci. Technol., 9, 015005(2019).

[21] Y. K. Ooi, J. Zhang. Light extraction efficiency analysis of flip-chip ultraviolet light-emitting diodes with patterned sapphire substrate. IEEE Photonics J., 10(2018).

[22] Z. Zheng, Q. Chen, J. Dai. Enhanced light extraction efficiency via double nano-pattern arrays for high-efficiency deep UV LEDs. Opt. Laser Technol., 143, 107360(2021).

[23] Y. Zheng, Y. Zhang, J. Zhang. Effects of meshed p-type contact structure on the light extraction effect for deep ultraviolet flip-chip light-emitting diodes. Nanoscale Res. Lett., 14, 149(2019).

[24] Z. Li, H. Lu, J. Wang. Maximizing the light extraction efficiency for AlGaN-based DUV-LEDs with two optimally designed surface structures under the guidance of PSO. Crystals, 12, 1700(2022).

[25] J. Yin, Y. Li, S. Chen. Surface plasmon enhanced hot exciton emission in deep UV-emitting AlGaN multiple quantum wells. Adv. Opt. Mater., 2, 451-458(2014).

[26] N. Jiang, Y. Chen, B. Lv. Plasmonic-enhanced efficiency of AlGaN-based deep ultraviolet LED by graphene/Al nanoparticles/graphene hybrid structure. Opt. Lett., 48, 3175-3178(2023).

[27] J. W. Lee, G. Ha, J. Park. AlGaN deep-ultraviolet light-emitting diodes with localized surface plasmon resonance by a high-density array of 40 nm Al nanoparticles. ACS Appl. Mater. Interfaces, 12, 36339-36346(2020).

[28] Z. Mi, M. Shatalov, C. Jagadish, R. Jain, T. Saxena. Chapter two - development of deep uv leds and current problems in material and device technology. Semiconductors and Semimetals, 45-83(2017).

[29] K. A. Bulashevich, S. Y. Karpov. Impact of surface recombination on efficiency of III‐nitride light‐emitting diodes. Phys. Status Solidi, 10, 480-484(2016).

[30] E. D. Palik. Handbook of Optical Constants of Solids(1998).

[31] N. A. Sanford, L. H. Robins, A. V. Davydov. Refractive index study of films grown on sapphire substrates. J. Appl. Phys., 94, 2980-2991(2003).

[32] S. Y. Karpov. Modeling of III-Nitride Light-Emitting Diodes: Progress, Problems, and Perspectives(2011).

[33] A. Pandey, J. Gim, R. Hovden. An AlGaN tunnel junction light emitting diode operating at 255 nm. Appl. Phys. Lett., 117, 241101(2020).

[34] A. Pandey, J. Gim, R. Hovden. Electron overflow of AlGaN deep ultraviolet light emitting diodes. Appl. Phys. Lett., 118, 241109(2021).

[35] D. K. Gifford, D. G. Hall. Light out-coupling enhancement of organic light-emitting devices with microlens array. Appl. Phys. Lett., 81, 4315-4317(2002).

[36] J. Frischeisen, Q. Niu, A. Abdellah. Light extraction from surface plasmons and waveguide modes in an organic light-emitting layer by nanoimprinted gratings. Opt. Express, 19, A7-A19(2011).

[37] S. A. Maier. Plasmonics: Fundamentals and Applications(2007).

[38] B. Hecht, H. Bielefeldt, L. Novotny. Local excitation, scattering, and interference of surface plasmons. Phys. Rev. Lett., 77, 1889-1892(1996).

[39] C. Reich, M. Guttmann, M. Feneberg. Strongly transverse-electric-polarized emission from deep ultraviolet AlGaN quantum well light emitting diodes. Appl. Phys. Lett., 107, 142101(2015).

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Wenyu Kang, Shilin Liu, Xiaofang Ye, Yang Chen, Wei Jiang, Jinchai Li, Kai Huang, Jun Yin, Junyong Kang, "Plasmonic omni-directional reflective pads for enhanced light extraction in sub-250 nm deep-ultraviolet light-emitting diodes," Photonics Res. 13, 1094 (2025)

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