Fig. 1. （a）Schematic diagram of the PbSe photoconductive model. The relationship between the theoretical responsivity of PbSe photoconductive detector with the width of photosensitive region（b），bias voltage（c），and film thickness（d）

Fig. 2. Schematic diagram of the detector performance characterization device（a）blackbody response，（b）mid-wavelength infrared imaging demonstration device

Fig. 3. Photo of x-y addressed PbSe photoconductive FPA detector under optical microscope（a）overall image of FPA，（b）partial enlarged pattern of FPA（the square area at the intersection of horizontal and vertical electrodes is the insulating layer）

Fig. 4. Characterization of the photoelectric response of the detector（a）typical responsivity spectrum of the pixel，（b）the pulsed laser response of the pixel，（c）the blackbody responsivity of the pixel varies with bias voltage，（d）noise current spectrum of the pixel

Fig. 5. （a）Pixel responsivity distribution in FPA，（b）NETD distribution in FPA

Fig. 6. Infrared imaging of PbSe FPA detector（a）partial thermal image，（b）comparison of complete thermal image with the real object