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Journal of Semiconductors, Volume. 40, Issue 4, 042801(2019)

Influence of growth conditions of oxide on electrical properties of AlGaN/GaN metal–insulator–semiconductor transistors

Shuxin Tan1 and Takashi Egawa2
Author Affiliations
  • 1School of Electronics and Information, Nantong University, Nantong 226019, China
  • 2Research Center for Nano-Device and System, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan
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    (Color online) C–V characteristics at 1 MHz for all the diodes.

    Fig. 1. (Color online) C–V characteristics at 1 MHz for all the diodes.

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    (Color online) (a) The output characteristics and (b) the transfer characteristics for samples A and B. (c) The output characteristics and (d) the transfer characteristics for samples C, D and E.

    Fig. 2. (Color online) (a) The output characteristics and (b) the transfer characteristics for samples A and B. (c) The output characteristics and (d) the transfer characteristics for samples C, D and E.

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    (Color online) The ID–VG curves and three-terminal gate current density (IG) in semi-logarithmic scale for (a) samples A and B and (b) samples C, D and E.

    Fig. 3. (Color online) The ID–VG curves and three-terminal gate current density (IG) in semi-logarithmic scale for (a) samples A and B and (b) samples C, D and E.

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    Shuxin Tan, Takashi Egawa. Influence of growth conditions of oxide on electrical properties of AlGaN/GaN metal–insulator–semiconductor transistors[J]. Journal of Semiconductors, 2019, 40(4): 042801

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    Paper Information

    Category: Articles

    Received: Dec. 28, 2018

    Accepted: --

    Published Online: Sep. 18, 2021

    The Author Email:

    DOI:10.1088/1674-4926/40/4/042801

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology