[1] [1] Kinch M A. HgCdTe: recent trends in the ultimate IR semiconductor[J]. J. Electron. Mater., 2010, 39(7): 1043-1052.

[2] [2] Chang Y, Becker C R, Grein C H , et al. Surface morphology and defect formation mechanisms for HgCdTe (211)B grown by molecular beam epitaxy[J]. Journal of Electronic Materials, 2008, 37:1171-1183.

[4] [4] Belas E, Bugár M, Grill R, et al. Elimination of inclusions in (CdZn) Te substrates by post-grown annealing[J]. J. Electron. Mater., 2007, 36:1025-1030.

[5] [5] Kim K, Hwang S, Yu H, et al. Two-step annealing to remove Te secondary-phase defects in CdZnTe while preserving the high electrical resistivity[J]. IEEE Transactions on Nuclear Science, 2018,65(8): 2333-2337.

[6] [6] SHENG F F, YANG J R, SUN S W, et al. Influence of Cd-rich annealing on defects in Te-rich CdZnTe materials[J]. J. Electron.Mater., 2014, 43(7): 2702-2708.

[7] [7] Zanio Kenneth. Chemical Diffusion in Cadmium Telluride[J]. Journal of Applied Physics, 1970, 41(5): 1935-1940.

[8] [8] Everson W J, Ard C K, Sepich J L, et al. Etch pit characterization of CdTe and CdZnTe substrates for use in mercury cadmium telluride epitaxy [J]. Journal of Electronic Materials, 1995, 24: 505-510.

[9] [9] ZHANG N, Yeckel A, Burger A, et al. Anomalous segregation during electrodynamic gradient freeze growth of cadmium zinc telluride[J].Journal of Crystal Growth, 2011, 325(1): 10-19.

[10] [10] Roy U N, Weiler S, Stein J. Growth and interface study of 2 in diameter CdZnTe by THM technique[J]. J. Cryst. Growth, 2010,312(19): 2840-2845.

[11] [11] SHEN J, Aidun D K, Regel L, et al. Characterization of precipitates in CdTe and Cd1－xZnxTe grown by vertical Bridgman-Stock barger technique[J]. Journal of Crystal Growth, 1993, 132(1-2): 250-260.

[12] [12] Zanio K. Chemical diffusion in Cadmium Telluride[J]. J. Appl. Phys.,1970, 41(5): 1935-1940.

[13] [13] Jordan A S, Zupp R P. Calculation of the P-T diagrams of CdTe[J]. J.Electrochem. Soc., 1969, 116(9): 1264-1285.

[14] [14] Lorenz M R. Phase equilibria in the system Cd-Te[J]. Journal of Physics and Chemistry of Solids, 23(7): 939-947.