Chinese Journal of Lasers, Volume. 26, Issue 2, 101(1999)

High Efficient CW Nd:SVAP Laser Operation at 1.06 μm and 1.34 μm Pumped by a Ti:sapphire Laser

[in Chinese]1, [in Chinese]1, [in Chinese]2, and [in Chinese]2
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  • 2[in Chinese]
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    References(5)

    [1] [1] Wang Changqing, Shen Deyuan, Meng Xianlin et al.. A diode-pumped low threshold Nd:SVAP/KTP laser. Chinese J. of Lasers, 1995, B4(5):393~396

    [3] [3] Qingpu Wang, Shengzhi Zhao, Xingyu Zhang. Laser characteristics of low-threshold high-efficiency Nd:Sr5(VO4)3F crystal. Opt. Lett., 1995, 20(11):1262~1264

    [4] [4] B. H. T. Chai, G. Loutts, J. Lcfaucheur et al.. Comparison of laser performance of Nd-doped YVO4, GdVO4, Ca5(PO4)3F, Sr5(PO4)3F and Sr5(VO4)3F. Proceedings on Advanced Solid-state Lasers, 1994, 20:41~52

    [5] [5] G. C. Bowkett, G. W. Baxter, D. J. Booth. Single-mode 1.34-μm Nd:YVO4 microchip laser with cw Ti:sapphire and diode-laser pumping. Opt. Lett., 1994,19(13):957~959

    [6] [6] G. J. Hall, A. I. Ferguson. Generation of single-frequency radiation at 1064, 1319, and 659.5 nm with an all-solid-state, out-of-plane Nd:YAG ring laser. Opt. Lett., 1994, 19(8):557~559

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. High Efficient CW Nd:SVAP Laser Operation at 1.06 μm and 1.34 μm Pumped by a Ti:sapphire Laser[J]. Chinese Journal of Lasers, 1999, 26(2): 101

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    Paper Information

    Category: Laser physics

    Received: Aug. 4, 1997

    Accepted: --

    Published Online: Aug. 9, 2006

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