Chinese Journal of Liquid Crystals and Displays, Volume. 39, Issue 1, 40(2024)
Performances and preparation of zinc-tin oxide thin-film transistors
Fig. 2. Transmittance of ZTO thin films with different sputtering powers in the range of 200~800 nm
Fig. 4. AFM images of ZTO films with different sputtering powers.（a）70 W；（b）80 W；（c）90 W；（d）100 W.
Fig. 6. O1s spectra of ZTO films with different sputtering powers.（a）70 W；（b）80 W；（c）90 W；（d）100 W.
Fig. 7. （a）Transfer characteristic curves，IDS1/2-VGS of ZTO thin film transistor under different sputtering power，（b）Output curves at 90 W.
Fig. 8. The bias stress test results of ZTO thin-film transistors prepared under different sputtering powers.（a）Positive bias stress；（b）Negative bias stress.
Table 1. Atomic content（mole fraction）of Sn，Zn and O elements in ZTO film
View tableView in ArticleTable 1. Atomic content（mole fraction）of Sn，Zn and O elements in ZTO film
溅射功率/W n（Zn）/% n（Sn）/% n（O）/% （n（Sn）/n（Sn+Zn））/% 70 28.28 13.65 58.07 32.55 80 28.54 14.01 57.45 32.93 90 25.17 14.02 60.81 35.77 100 26.60 14.82 58.58 35.79
Table 2. Electrical parameters under different sputtering power
View tableView in ArticleTable 2. Electrical parameters under different sputtering power
溅射功率/W 饱和迁移率/（cm2·V-1·s-1） 阈值电压/V 亚阈值摆幅/（V/decade） 电流开关比（ION/IOFF） 70 7.74 0.11 0.04 1.43E8 80 10.69 0.94 0.58 4.86E8 90 15.61 -5.06 0.30 8.92E9 100 8.44 -6.57 0.57 4.75E8
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Xuefeng CHU, Xiaojun HU, Qi ZHANG, Linmao HUANG, Yihan XIE. Performances and preparation of zinc-tin oxide thin-film transistors[J]. Chinese Journal of Liquid Crystals and Displays, 2024, 39(1): 40
Category: Research Articles
Received: Nov. 2, 2023
Accepted: --
Published Online: Mar. 27, 2024
The Author Email: Xuefeng CHU (stone2009@126.com)
