[4] [4] Akhavan N D, Jolley G, Umana-Membreno G A, et al. Performance modeling of bandgap engineered HgCdTe-based nBn infrared detectors[J]. IEEE Transactions on Electron Devices, 2014, 61(11): 3691-3698.

[5] [5] Klipstein P. “XBn” barrier photodetectors for high sensitivity and high operating temperature infrared sensors[C]//Proc. of SPIE, 2008, 6940: 69402U.

[6] [6] Kopytko M, Keblowski A, Gawron W, et al. MOCVD grown HgCdTe barrier detectors for MWIR high-operating temperature operation[J]. Optical Engineering, 2015, 54(10): 105105.

[7] [7] Klipstein P, Klin O, Grossman S, et al. XBn barrier detectors for high operating temperatures[C]// Proc. of SPIE, 2010, 7608: 76081V.

[8] [8] Martyniuk P, Rogalski A. Theoretical modelling of MWIR thermoelectrically cooled nBn HgCdTe detector[J]. Bulletin of the Polish Academy of Sciences: Technical Sciences, 2013, 61(1): 211-220.

[9] [9] YE Z H, CHEN Y Y, ZHANG P, et al. Modeling of LWIR nBn HgCdTe photodetector[C]// Proc. of SPIE, 2014, 9070: 90701L.

[13] [13] Rogalski A, Kopytko M, Martyniuk P, et al. Comparison of performance limits of the HOT HgCdTe photodiodes with colloidal quantum dot infrared detectors[J]. Bulletin of the Polish Academy of Sciences Technical Sciences, 2020, 68(4): 845-855.

[15] [15] Lutz H, Breiter R, Figgemeier H, et al. Improved high operating temperature MCT MWIR modules[C]// Proc. of SPIE, 2014, 9070: 90701D.

[17] [17] Martyniuk P, Rogalski A. HOT infrared photodetectors[J]. Opto-Electronics Review, 2013, 21(2): 1955.

[18] [18] Maimon S, Wicks G W. nBn detector, an infrared detector with reduced dark current and higher operating temperature[J]. Applied Physics Letters, 2006, 89(15): 151109.

[19] [19] Klipstein P, Aronov D, Berkowicz E, et al. Reducing the cooling requirements of mid-wave IR detector arrays[J]. SPIE Newsroom, 2011, Doi: 10.1117/2.1201111.003919.

[20] [20] LEI L, LI L, YEH, et al. Long wavelength interband cascade infrared photodetectors operating at high temperatures[J]. Journal of Applied Physics, 2016, 120(19): 193102.

[21] [21] Rabiee Golgir H, Ghandiparsi S, Devine E P, et al. Ultra-thin super absorbing photon trapping materials for high-performance infrared detection[C]// Proc. of SPIE, 2019, 11002: 110020T.

[22] [22] Ashley T, Elliott C T, White A M. Non-equilibrium devices for infrared detection[C]// Proc. of SPIE, 1985, 572: 123.

[23] [23] Kopytko M, K.b.owski A, Gawron W, et al. High-operating temperature MWIR nBn HgCdTe detector grown by MOCVD[J]. Opto-Electronics Review, 2013, 21(4): 151109.

[24] [24] White A. Infrared Detectors [P]. U.S.: Patent 4,679,063, [1983-09-22].

[25] [25] Klipstein P. Depletion-less Photodiode with Suppressed Dark Current and Method for Producing the Same [P]. U.S.: Patent 7,795,640 B2, [2004-06-28].

[26] [26] Kopytko M, Rogalski A. HgCdTe barrier infrared detectors[J]. Progress in Quantum Electronics, 2016, 47(12): 1-18.

[27] [27] Martyniuk P, Kopytko M, Rogalski A. Barrier infrared detectors[J]. Opto-Electronics Review, 2014, 22(2): 1624.

[28] [28] Rogalski A, Martyniuk P. Mid-wavelength Infrared nBn for HOT Detectors[J]. Journal of Electronic Materials, 2014, 43(8): 2963-2969.

[29] [29] Pedrazzani J R, Maimon S, Wicks G W. Use of nBn structures to suppress surface leakage currents in unpassivated InAs infrared photodetectors[J]. Applied Physics Letters, 2008, 44(25): 1487.

[30] [30] Savich G R, Pedrazzani J R, Sidor D E, et al. Benefits and limitations of unipolar barriers in infrared photodetectors[J]. Infrared Physics & Technology, 2013, 59: 152-155.

[31] [31] Sidor D E, Savich G R, Wicks G W. Surface leakage mechanisms in III-V infrared barrier detectors[J]. Journal of Electronic Materials, 2016, 45(9): 4663-4667.

[32] [32] Rogalski A. Next decade in infrared detectors[C]// Proc. of SPIE, 2017, 10433: 104330L.

[33] [33] Savich G R, Pedrazzani J R, Maimon S, et al. Use of epitaxial unipolar barriers to block surface leakage currents in photodetectors[J]. Physica Status Solidi C, 2010, 7(10): 2540-2543.

[34] [34] Kopytko M, Gom.ka E, Michalczewski K, et al. Investigation of surface leakage current in MWIR HgCdTe and InAsSb barrier detectors[J]. Semiconductor Science and Technology, 2018, 33(12): 125010.

[35] [35] DU X, Savich G R, Marozas B T, et al. Suppression of lateral diffusion and surface leakage currents in nBn photodetectors using an inverted design[J]. Journal of Electronic Materials, 2018, 47(2): 1038-1044.

[36] [36] Martyniuk P, Antoszewski J, Martyniuk M, et al. New concepts in infrared photodetector designs[J]. Applied Physics Reviews, 2014, 1(4): 41102.

[37] [37] Kopytko M, J.wikowski K. Numerical analysis of current–voltage characteristics of LWIR nBn and p-on-n HgCdTe photodetectors[J]. Journal of Electronic Materials, 2013, 42(11): 3211-3216.

[39] [39] Itsuno A M, Phillips J D, Velicu S. Mid-wave infrared HgCdTe nBn photodetector[J]. Applied Physics Letters, 2012, 100(16): 161102.

[40] [40] Itsuno A M, Phillips J D, Velicu S. Design and modeling of HgCdTe nBn detectors[J]. Journal of Electronic Materials, 2011, 40(8): 1624-1629.

[41] [41] Itsuno A M, Phillips J D, Velicu S. Design of an auger-suppressed unipolar HgCdTe NBνN photodetector[J]. Journal of Electronic Materials, 2012, 41(10): 2886-2892.

[42] [42] Itsuno A M, Phillips J D, Gilmore A S, et al. Calculated performance of an auger-suppressed unipolar HgCdTe photodetector for high temperature operation[C]// Proc. of SPIE, 2011, 8155: 81550J.

[43] [43] Ting D Z-Y, Hill C J, Soibel A, et al. A high-performance long wavelength superlattice complementary barrier infrared detector[J]. Applied Physics Letters, 2009, 95(2): 23508.

[44] [44] Martyniuk P, Rogalski A. Modelling of MWIR HgCdTe complementary barrier HOT detector[J]. Solid-State Electronics, 2013, 80: 96-104.

[45] [45] Martyniuk P, Gawron W, Rogalski A. Theoretical modeling of HOT HgCdTe barrier detectors for the mid-wave infrared range[J]. Journal of Electronic Materials, 2013, 42(11): 3309-3319.

[46] [46] Kopytko M, Jozwikowski K. Generation-recombination effect in MWIR HgCdTe barrier detectors for high-temperature operation[J]. IEEE Transactions on Electron Devices, 2015, 62(7): 2278-2284.

[47] [47] Kopytko M, Keblowski A, Gawron W, et al. MOCVD grown HgCdTe barrier structures for HOT conditions[J]. IEEE Transactions on Electron Devices, 2014, 61(11): 3803-3807.

[48] [48] Kopytko M. Design and modelling of high-operating temperature MWIR HgCdTe nBn detector with n- and p-type barriers[J]. Infrared Physics & Technology, 2014, 64(15): 47-55.

[49] [49] Klem J F, Kim J K, Cich M J, et al. Comparison of nBn and nBp mid-wave barrier infrared photodetectors[C]// Proc. of SPIE, 2010, 7608: 76081P.

[50] [50] Kopytko M, K.b.owski A, Gawron W, et al. Different cap-barrier design for MOCVD grown HOT HgCdTe barrier detectors[J]. Opto-Electronics Review, 2015, 23(2): 143-148.

[51] [51] Kopytko M, K.b.owski A, Gawron W, et al. MOCVD grown HgCdTe p+BnN+ barrier detector for MWIR HOT operation[C]// Proc. of SPIE, 2015, 9451: 945117.

[52] [52] Gawron W, Sobieski J, Manyk T, et al. MOCVD grown HgCdTe heterostructures for medium wave infrared detectors[J]. Coatings, 2021, 11(5): 611.

[53] [53] Uzgur F, Kocaman S. Barrier engineering for HgCdTe unipolar detectors on alternative substrates[J]. Infrared Physics & Technology, 2019, 97(3): 123-128.

[54] [54] Kopytko M, J.wikowski K, Rogalski A. Fundamental limits of MWIR HgCdTe barrier detectors operating under non-equilibrium mode[J]. Solid-State Electronics, 2014, 100(1): 20-26.

[55] [55] Kopytko M, Wrel J, J.wikowski K, et al. Engineering the bandgap of unipolar HgCdTe-based nBn infrared photodetectors[J]. Journal of Electronic Materials, 2015, 44(1): 158-166.

[56] [56] Akhavan N D, Umana-Membreno G A, Jolley G, et al. A method of removing the valence band discontinuity in HgCdTe-based nBn detectors[J]. Applied Physics Letters, 2014, 105(12): 121110.

[57] [57] Akhavan N D, Umana-Membreno G A, Gu R, et al. Delta doping in HgCdTe-Based unipolar barrier photodetectors[J]. IEEE Transactions on Electron Devices, 2018, 65(10): 4340-4345.

[58] [58] QIU W C, JIANG T, CHENG X A. A bandgap-engineered HgCdTe PBπn long-wavelength infrared detector[J]. Journal of Applied Physics, 2015, 118(12): 124504.

[59] [59] Kopytko M, K.b.owski A, Gawron W, et al. LWIR HgCdTe barrier photodiode with auger-suppression[J]. Semiconductor Science and Technology, 2016, 31(3): 35025.

[60] [60] HE J, WANG P, LI Q, et al. Enhanced performance of HgCdTe long-wavelength infrared photodetectors with nBn design[J]. IEEE Transactions on Electron Devices, 2020, 67(5): 2001-2007.

[62] [62] Rogalski A, Martyniuk P, Kopytko M, et al. Trends in performance limits of the HOT infrared photodetectors[J]. Applied Sciences, 2021, 11(2): 501.

[63] [63] Lee D, Carmody M, Piquette E, et al. High-operating temperature HgCdTe: a vision for the near future[J]. Journal of Electronic Materials, 2016, 45(9): 4587-4595.

[64] [64] Capper P, Garland J. Mercury Cadmium Telluride: Growth, Properties, and Applications[M]. Oxford: Wiley-Blackwell, 2011: 474-476.

[65] [65] Piotrowski A, K.os K, Gawron W, et al. Uncooled or minimally cooled 10 μm photodetectors with subnanosecond response time[C]// Proc. of SPIE, 2007, 6542: 65421B.

[66] [66] Madejczyk P, Gawron W, K.b.owski A, et al. Response time study in unbiased long wavelength HgCdTe detectors[J]. Optical Engineering, 2017, 56(8): 087103.1-087103.8.

[67] [67] Pawluczyk J, Piotrowski J, Pusz W, et al. Complex behavior of time response of HgCdTe HOT photodetectors[J]. Journal of Electronic Materials, 2015, 44(9): 3163-3173.

[68] [68] Grodecki K, Martyniuk P, Kopytko M, et al. Fast response hot (1 1 1) HGCDTE MWIR Detectors[J]. Metrology and Measurement Systems, 2017, 24(3): 509-514.

[69] [69] Piotrowski A, Madejczyk P, Gawron W, et al. Progress in MOCVD growth of HgCdTe heterostructures for uncooled infrared photodetectors[J]. Infrared Physics & Technology, 2007, 49(3): 173-182.

[70] [70] Kopytko M, K.b.owski A, Madejczyk P, et al. Optimization of a HOT LWIR HgCdTe photodiode for fast response and high detectivity in zero-bias operation mode[J]. Journal of Electronic Materials, 2017, 46(10): 6045-6055.

[71] [71] Madejczyk P, Gawron W, Martyniuk P, et al. Engineering steps for optimizing high temperature LWIR HgCdTe photodiodes[J]. Infrared Physics & Technology, 2017, 81(10): 276-281.

[72] [72] Kopytko M, J.wikowski K, Madejczyk P, et al. Analysis of the response time in high-temperature LWIR HgCdTe photodiodes operating in non-equilibrium mode[J]. Infrared Physics & Technology, 2013, 61: 162-166.

[73] [73] Piotrowski J F, Rogalski A. High-Operating-Temperature Infrared Photodetectors[M]. Bellingham, Washington: SPIE Press, 2007.

[74] [74] Kopytko M, Martyniuk P, Madejczyk P, et al. High frequency response of LWIR HgCdTe photodiodes operated under zero-bias mode[J]. Optical and Quantum Electronics, 2018, 50(2): 451.

[75] [75] Madejczyk P, Gawron W, K.b.owski A, et al. Higher operating temperature IR detectors of the MOCVD grown HgCdTe heterostructures[J]. Journal of Electronic Materials, 2020, 49(11): 6908-6917.

[76] [76] Martyniuk P, Gawron W, St.pień D, et al. Status of long-wave Auger suppressed HgCdTe detectors operating＞ 200 K[J]. Opto-Electronics Review, 2015, 23(4): 151109.

[77] [77] Martyniuk P, Kopytko M, Keblowski A, et al. Interface influence on the long-wave Auger suppressed multilayer N+πP+p+n+ HgCdTe HOT detector performance[J]. IEEE Sensors Journal, 2017, 17(3): 674-678.

[78] [78] Madejczyk P, Gawron W, Martyniuk P, et al. MOCVD grown HgCdTe device structure for ambient temperature LWIR detectors[J]. Semiconductor Science and Technology, 2013, 28(10): 105017.

[79] [79] Madejczyk P, Gawron W, K.b.owski A, et al. Response time improvement of LWIR HOT MCT detectors[C]// Proc. of SPIE, 2017, 10177: 1017719.

[80] [80] Martyniuk P, Kopytko M, Madejczyk P, et al. Theoretical simulation of a room temperature HgCdTe long-wave detector for fast response.operating under zero bias conditions[J]. Metrology and Measurement Systems, 2017, 24(4): 729-738.

[81] [81] Kopytko M, Sobieski J, Gawron W, et al. Minority carrier lifetime in HgCdTe (1 0 0) epilayers and their potential application to background radiation limited MWIR photodiodes[J]. Semiconductor Science and Technology, 2021, 36(5): 55003.

[82] [82] Hipwood L G, Jones C L, Walker D, et al. Affordable high-performance LW IRFPAs made from HgCdTe grown by MOVPE[C]// Proc. of SPIE, 2007, 6542: 65420I.

[83] [83] Jones C L, Hipwood L G, Shaw C J, et al. High-performance MW and LW IRFPAs made from HgCdTe grown by MOVPE[C]// Proc. of SPIE, 2006, 6206: 620610.

[84] [84] Hipwood L G, Gordon N T, Jones C L, et al. 4 μm cut-off MOVPE Hg1-x CdxTe hybrid arrays with near BLIP performance at 180 K[C]// Proc. of SPIE, 2003, 5074: 185.

[85] [85] Knowles P, Hipwood L, Pillans L, et al. MCT FPAs at high operating temperatures[C]//Proc. of SPIE, 2011, 8185: 818505.

[86] [86] Gordon N T, Lees D J, Bowen G, et al. HgCdTe detectors operating above 200 K[J]. Journal of Electronic Materials, 2006, 35(6): 1140-1144.

[87] [87] Bowen G J, Blenkinsop I D, Catchpole R, et al. HOTEYE: a novel thermal camera using higher operating temperature infrared detectors[C]// Proc. of SPIE, 2005, 5783: 392.

[88] [88] Hipwood L G, Jones C L, Price J, et al. LW Hawk: a 16 μm pitch full-TV LW IRFPA made from HgCdTe grown by MOVPE[C]// Proc. of SPIE, 2009, 7298: 729820.

[89] [89] Abbott P, Thorne P M, Arthurs C P. Latest detector developments with HgCdTe grown by MOVPE on GaAs substrates[C]// Proc. of SPIE, 2011, 8012: 801236.

[90] [90] Knowles P, Hipwood L, Shorrocks N, et al. Mercury cadmium telluride detectors achieve high operating temperatures[J]. SPIE Newsroom, 2012. Doi: 10.1117/2.1201211.004535.

[91] [91] McEwen R K, Jeckells D, Bains S, et al. Developments in reduced pixel geometries with MOVPE grown MCT arrays[C]// Proc. of SPIE, 2015, 9451: 94512D.

[92] [92] Jeckells D, McEwen R K, Bains S, et al. Further developments of 8 μm pitch MCT pixels at Finmeccanica (formerly Selex ES)[C]// Proc. of SPIE, 2016, 9819: 98191X.

[93] [93] Kinch M A, Wan C-F, Schaake H, et al. Universal 1/f noise model for reverse biased diodes[J]. Applied Physics Letters, 2009, 94(19): 193508.

[94] [94] Lee D L, Dreiske P, Ellsworth J, et al. Law 19: the ultimate photodiode performance metric[C]// Proc. of SPIE, 2020, 11407: 114070X.

[96] [96] Knowles P, Hipwood L, Shorrocks N, et al. Status of IR detectors for high operating temperature produced by MOVPE growth of MCT on GaAs substrates[C]// Proc. of SPIE, 2012, 8541: 854108.

[97] [97] Jerram P, Beletic J. Teledyne’s high performance infrared detectors for Space missions[C]// Proc. of SPIE, 2018, 11180: 111803D-2.