Acta Physica Sinica, Volume. 68, Issue 24, 248401-1(2019)

Theoretical analysis and simulation of W-band sheet beam extended interaction klystron amplifier

Zao-Jin Zeng, Qiao-Sheng Ma, Lin-Lin Hu, Yi Jiang, Peng Hu, Wen-Qiang Lei, Guo-Wu Ma, and Hong-Bin Chen*
Figures & Tables(28)
Simplified E-field of 2π mode in three-gap cavity.三间隙谐振腔2π模场示意图
Geff3/G0 versus βeL of three-gap cavity.归一化电子负载电导Geff3/G0与βeL的关系
Geff3/G0 versus βeL of three-gap cavity.归一化电子负载电导Geff3/G0与βeL的关系
Geff3/G0 versus βed of three-gap cavity.归一化电子负载电导Geff3/G0与渡越角βed的关系
Beff3/G0 versus βeL of three-gap cavity.归一化电子负载电纳Beff3/G0与βeL的关系
Beff3/G0 versus βeL of three-gap cavity.归一化电子负载电纳Beff3/G0与βeL的关系
Beff3/G0 versus βed of three-gap cavity.归一化电子负载电纳Beff3/G0与渡越角βed的关系
Gb/G0 versus βeL of three-gap cavity.两种理论计算的Gb/G0与βeL的关系
Bb/G0 versus βeL of three-gap cavity.两种理论计算的Bb/G0与βeL的关系
model of the sheet beam extended interaction klystron.带状注扩展互作用速调管高频结构仿真模型
Geff3/G0 versus βed and βeL of three-gap cavity.归一化电子负载电导Geff3/G0与间隙直流渡越角βed和相邻间隙中心之间的直流渡越角βeL的关系
Fp versus U of three-gap cavity.归一化缩减等离子体频率与工作电压的关系
Gb versus U of three-gap cavity.电子负载电导与工作电压的关系
Ez versus axial distance of each mode: (a) Input cavity; (b) middle cavity 1; (c) middle cavity 2; (d) output cavity.各模式Ez沿轴向的分布 (a)输入腔; (b)中间腔1; (c)中间腔2; (d)输出腔
Ez versus y axial of each mode: (a) Input cavity; (b) middle cavity 1; (c) middle cavity 2; (d) output cavity.各间隙中心Ez沿y轴的分布 (a)输入腔; (b)中间腔1; (c)中间腔2; (d)输出腔
Ez versus x axial of each mode: (a) Input cavity; (b) middle cavity 1; (c) middle cavity 2; (d) output cavity.各间隙中心Ez沿x轴的分布 (a)输入腔; (b)中间腔1; (c)中间腔2; (d)输出腔
Qt versus U of each mode: (a) Input cavity; (b) middle cavity 1; (c) middle cavity 2; (d) output cavity.各模式Qt与电压U的关系 (a)输入腔; (b)中间腔1; (c)中间腔2; (d)输出腔
y-z section plane of the extended interaction cavity and particle trajectories.带状注速调管高频结构y-z剖面图及电子轨迹
x-z section plane of the extended interaction cavity and particle trajectories.带状注速调管高频结构x-z剖面图及电子轨迹
Waveform of input microwave.瞬时输入功率波形
Fundamental modulated current amplitude versus axial distance.前三腔调制电流基频分量沿轴向的分布
Waveform of current at the entry of output cavity.输出腔入口处调制电流波形
Kinetic energy distribution vs. axial distance.电子能量分布随轴向距离的变化
Instantaneous waveform of output microwave.瞬时输出功率波形
Spectrum of output microwave.输出功率频谱
Output power and efficiency versus input microwave frequency.输出功率和电子效率与输入微波频率的关系
Output power and efficiency versus input microwave power.输出功率和电子效率与输入微波功率的关系
  • Table 1.

    Structural parameters of W-band sheet beam extended interaction klystron amplifier.

    W波段带状注扩展互作用速调管高频结构参数

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    Table 1.

    Structural parameters of W-band sheet beam extended interaction klystron amplifier.

    W波段带状注扩展互作用速调管高频结构参数

    谐振腔纵向工作模式谐振频率/GHz固有品质因数Q0外观品质因数Qext起始位置/mm
    输入腔2π模94.525626270
    中间腔12π模94.565553.04
    中间腔22π模94.565556.08
    输出腔2π模94.525626279.22
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Zao-Jin Zeng, Qiao-Sheng Ma, Lin-Lin Hu, Yi Jiang, Peng Hu, Wen-Qiang Lei, Guo-Wu Ma, Hong-Bin Chen. Theoretical analysis and simulation of W-band sheet beam extended interaction klystron amplifier[J]. Acta Physica Sinica, 2019, 68(24): 248401-1

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Paper Information

Received: Jun. 12, 2019

Accepted: --

Published Online: Sep. 17, 2020

The Author Email:

DOI:10.7498/aps.68.20190907

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