Chinese Journal of Lasers, Volume. 46, Issue 5, 0503001(2019)

Effect of Laser Irradiation on Performances of Donor-Acceptor-Type Copolymer Memristor

Shuai Yuan1,2, Ruixin Dong1,2、*, Ruxin Liu1,2, and Xunling Yan1,2
Author Affiliations
  • 1School of Physics Science and Information Technology, Liaocheng University, Liaocheng, Shandong 252059, China
  • 2Shandong Key Laboratory of Optical Communication Science and Technology, Liaocheng, Shandong 252059, China
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    Figures & Tables(9)
    Schematic of molecular structure of polymer IPDT and ultraviolet-visible absorption spectrum of polymer IPDT film. (a) Schematic of molecular structure; (b) ultraviolet-visible absorption spectrum
    Structural diagram of polymer memristor. (a) Structural diagram of Al/IPDT/ITO device; (b) SEM image of cross-section of device; (c) AFM image of polymer IPDT film
    Device performances. (a) I-V curve of Al/IPDT/ITO memristor, and inset indicating I-V curve of device from -3 V to 3 V; (b) stability test results of device
    I-V curves of device after 632 nm laser irradiation for different time. (a) 20 s; (b) 60 s
    Stability test results of device. (a) After 632 nm laser irradiation for 60 s; (b) resistance changes of HRS and LRS in test for first 50 cycles
    I-V curves of device after modulation by laser with different wavelengths. (a) 405 nm; (b) 514 nm
    AFM images of polymer IPDT in tunneling mode. (a) Without laser; (b) after 632 nm laser irradiation for 1 min
    • Table 1. Performance change of device after 632 nm laser irradiation

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      Table 1. Performance change of device after 632 nm laser irradiation

      Irradiation time /sON/OFFvoltage /VMax ON/OFF ratio(read on 1 V)Stability testResistance variation trend
      08/-7.51002000High→low→low→high(bipolar)
      203/-320-High→low→high→low(unbipolar)
      60-2.2/1.31043500Low→high→high→low(bipolar)
    • Table 2. Change of ON/OFF voltages of device after laser irradiation under different wavelengths

      View table

      Table 2. Change of ON/OFF voltages of device after laser irradiation under different wavelengths

      Wavelength /nmON/OFFvoltage /VLaser irradiationtime /min
      Without laser8/-7.5-
      405-1.7/0.8785
      514-1.5/1.2290
      632-2.2/1.31
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    Shuai Yuan, Ruixin Dong, Ruxin Liu, Xunling Yan. Effect of Laser Irradiation on Performances of Donor-Acceptor-Type Copolymer Memristor[J]. Chinese Journal of Lasers, 2019, 46(5): 0503001

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    Paper Information

    Category: materials and thin films

    Received: Dec. 26, 2018

    Accepted: Feb. 18, 2019

    Published Online: Nov. 11, 2019

    The Author Email: Dong Ruixin (dongruixin@lcu.edu.cn)

    DOI:10.3788/CJL201946.0503001

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