Ultrahigh detectivity, high-speed and low-dark current AlGaN solar-blind heterojunction field-effect phototransistors realized using dual-float-photogating effect

Kai Wang; Xinjia Qiu; Zesheng Lv; Zhiyuan Song; Hao Jiang

doi:10.1364/PRJ.444444

Photonics Research, Volume. 10, Issue 1, 111(2022)

Ultrahigh detectivity, high-speed and low-dark current AlGaN solar-blind heterojunction field-effect phototransistors realized using dual-float-photogating effect

Kai Wang^1、†, Xinjia Qiu^1、†, Zesheng Lv¹, Zhiyuan Song¹, and Hao Jiang^1,2,3、*

Author Affiliations

¹School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China

²State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China

³Guangdong Engineering Technology R & D Center of Compound Semiconductors and Devices, Sun Yat-sen University, Guangzhou 510275, China

show less

Cited By

Article index updated: Mar. 9, 2025

Citation counts are provided from Web of Science. The counts may vary by service, and are reliant on the availability of their data.

The article is cited by 26 article(s) from Web of Science.

Tools

Get Citation

Copy Citation Text

Kai Wang, Xinjia Qiu, Zesheng Lv, Zhiyuan Song, Hao Jiang, "Ultrahigh detectivity, high-speed and low-dark current AlGaN solar-blind heterojunction field-effect phototransistors realized using dual-float-photogating effect," Photonics Res. 10, 111 (2022)

Download Citation

EndNote(RIS)BibTex Plain Text

Set citation alerts for article

Save article for my favorites

Paper Information

Category: Optical Devices

Received: Sep. 28, 2021

Accepted: Nov. 4, 2021

Published Online: Dec. 13, 2021

The Author Email: Hao Jiang (stsjiang@mail.sysu.edu.cn)

DOI:10.1364/PRJ.444444

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology