Journal of Infrared and Millimeter Waves, Volume. 41, Issue 2, 413(2022)
The passivation effects of CdTe deposited by MBE in MW HgCdTe photodiodes
Fig. 1. Flow-process diagram of HgCdTe photodiodes passivated by the CdTe in-suit
Fig. 2. Topography images of CdTe or HgCdTe using laser scanning confocal microscopy(a)CdTe deposited by MBE,(b)HgCdTe after etching CdTe in-suit, and(c)HgCdTe after etching top layer HgCdTe
Fig. 3. AFM topography images of CdTe or HgCdTe(a)CdTe deposited by MBE,(b)HgCdTe after etching CdTe in-suit, and(c)CdTe deposited by E-beam evaporation
Fig. 5. Cross-sectional SEM images of the CdTe and HgCdTe interface(a)cross-sectional images of CdTe deposited by MBE, and(b)cross-sectional images of CdTe deposited by E-beam evaporation
Fig. 6. I-V and R-V characteristics of HgCdTe photodiodes with different passivation layers(a)photodiodes passivated by CdTe in-suit,(b)photodiodes passivated by CdTe/ZnS,(c)photodiodes passivated by CdTe in-suit with annealing after implant, and(d)photodiodes passivated by CdTe/ZnS with annealing after implant
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Xiao-Hui XIE, Chun LIN, Lu CHEN, Yu ZHAO, Jing ZHANG, Li HE. The passivation effects of CdTe deposited by MBE in MW HgCdTe photodiodes[J]. Journal of Infrared and Millimeter Waves, 2022, 41(2): 413
Category: Research Articles
Received: May. 27, 2021
Accepted: --
Published Online: Jul. 8, 2022
The Author Email: Xiao-Hui XIE (xiexiaohui@mail.sitp.ac.cn)