Journal of Infrared and Millimeter Waves, Volume. 41, Issue 2, 413(2022)
The passivation effects of CdTe deposited by MBE in MW HgCdTe photodiodes
The characterizations of CdTe film deposited by molecular beam epitaxy (MBE) in-suit had been studied using atomic force microscopy (AFM) and scanning electron microscopy (SEM).The cross-hatch pattern can be seen on the CdTe film surface. The roughness of CdTe film deposited by MBE in-suit on HgCdTe is about 1~2 nm. The minority carrier lifetime of HgCdTe passivated by CdTe in-suit is larger than the HgCdTe passivated by the CdTe deposited by E-beam evaporation after etched top 1um HgCdTe at 77 K. The I-V characteristics of MW photodiodes passivated by the CdTe in-suit are similar with the photodiodes passivated by the CdTe/ZnS films.
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Xiao-Hui XIE, Chun LIN, Lu CHEN, Yu ZHAO, Jing ZHANG, Li HE. The passivation effects of CdTe deposited by MBE in MW HgCdTe photodiodes[J]. Journal of Infrared and Millimeter Waves, 2022, 41(2): 413
Category: Research Articles
Received: May. 27, 2021
Accepted: --
Published Online: Jul. 8, 2022
The Author Email: Xiao-Hui XIE (xiexiaohui@mail.sitp.ac.cn)