[1] [1] MINAMI T.Transparent conducting oxide semiconductors for transparent electrodes［J］.Semiconductor Science and Technology, 2005, 20(4)：S35.

[2] [2] GRANQVIST C G.Transparent conductors as solar energy materials：a panoramic review［J］. Solar Energy Materials and Solar Cells, 2007, 91(17)：1529-1598.

[3] [3] ELLMER K.Past achievements and future challenges in the development of optically transparent electrodes［J］.Nature Photonics, 2012, 6(12)：809.

[4] [4] FORTUNATO E, BARQUINHA P, MARTINS R.Oxide semiconductor thin-film transistors：a review of recent advances［J］.Advanced materials, 2012, 24(22)：2945-2986.

[5] [5] JIANG L Q, GUO J K, LIU H B, et al.Prediction of lattice constant in cubic perovskites［J］.Journal of Physics and Chemistry of Solids, 2006, 67(7)：1531-1536.

[6] [6] KESTIGIAN M, DICKINSON J G, WARD R.Ion-deficient phases in titanium and vanadium compounds of the perovskite type1［J］.Journal of the American Chemical Society, 1957, 79(21)：5598-5601.

[7] [7] ZUBKOV V G, BAZUEV G V, PERELYAEV V A, et al.Magnetic structure of LaVO3［J］.Fizika Tverdogo Tela, 1973, 15(5)：1610-1612.

[8] [8] BAZUEV G V, MATVEENKO I I, SHVEIKIN G P. Magnetic properties of rare-earth orthovanadites［J］. Soy. Phys. Solid State, 1974, 16: 155.

[9] [9] DOUGIER P, HAGENMULLER P.Propriétés cristallographiques, magnetiques, et electriques de l'orthovanadite de lanthane LaVO3［J］.Journal of Solid State Chemistry, 1974, 11(3)：177-183.

[10] [10] GANGULY P, PARKASH O, RAO C N R.Electron transport and magnetic properties of rare-earth ortho-titanites and-vanadites, LnTiO3 and LnVO3［J］.Physica Status Solidi(a), 1976, 36(2)：669-678.

[11] [11] FUJIOKA J, MIYASAKA S, TOKURA Y.Doping Variation of Orbitally Induced Anisotropy in the Electronic Structure of La1-xSrxVO3［J］.Physical Review Letters, 2006, 97(19)：196401.

[12] [12] INABA F, ARIMA T, ISHIKAWA T, et al.Change of electronic properties on the doping-induced insulator-metal transition in La1-xSrxVO3［J］.Physical Review B, 1995, 52(4)：R2221.

[13] [13] CHOI W, SANDS T, KIM K Y.Epitaxial growth of semiconducting LaVO3 thin films［J］.Journal of Materials Research, 2000, 15(1)：1-3.

[14] [14] HU L, WEI R, YAN J, et al.La2/3Sr1/3VO3 Thin Films：A new p-type transparent conducting oxide with very high figure of merit［J］.Advanced Electronic Materials, 2018, 4(3)：1700476.

[15] [15] TOMPKINS H G, HILFIKER J N.Spectroscopic ellipsometry：practical application to thin film characterization［M］.New York：Momentum Press, 2015.

[16] [16] WANG L, LI Y, BERA A, et al.Device performance of the mott insulator LaVO3 as a photovoltaic material［J］.Physical Review Applied, 2015, 3(6)：064015.

[17] [17] ZHANG H T, BRAHLEK M, JI X, et al.High-quality LaVO3 films as solar energy conversion material［J］.ACS Applied Materials & Interfaces, 2017, 9(14)：12556-12562.

[18] [18] HU L, LUO X, ZHANG K J, et al.Oxygen vacancies-induced metal-insulator transition in La2/3Sr1/3VO3 thin films：role of the oxygen substrate-to-film transfer［J］.Applied Physics Letters, 2014, 105(11)：111607.

[19] [19] MESSAOUDI O, MAKHLOUF H, SOUISSI A, et al.Correlation between optical and structural properties of copper oxide electrodeposited on ITO glass［J］.Journal of Alloys and Compounds, 2014(611)：142-148.

[20] [20] NUNLEY T N, WILLETT-GIES T I, COOKE J A, et al.Optical constants, band gap, and infrared-active phonons of (LaAlO3)0.3(Sr2AlTaO6)0.35(LSAT) from spectroscopic ellipsometry［J］.Journal of Vacuum Science & Technology A：Vacuum, Surfaces, and Films, 2016, 34(5)：051507.

[21] [21] FARIN G E, FARIN G.Curves and surfaces for CAGD：a practical guide［M］.San Francisco：Morgan Kaufmann, 2002.

[22] [22] JOHS B, HALE J S.Dielectric function representation by B-splines［J］.Physica Status Solidi(a), 2008, 205(4)：715-719.