Chinese Journal of Lasers, Volume. 36, Issue 2, 328(2009)

Strong Band Mixing in Bulk GaAs under High Electric Field Investigated by Time-Domain Terahertz Spectroscopy

Zhu Yiming1,2、*, Zhang Dawei1, He Boyong2, and Zhuang Songlin1
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    References(26)

    [1] [1] Y. Yamashita, A. Endoh, K. Shinohara et al.. Pseudomorphic In0.52Al0.48As/In0.7Ga0.3As HEMTs with an ultrahigh fT of 562 GHz[J]. IEEE Electron. Dev. Lett., 2002, 23(10): 573~575

    [2] [2] P. Das, R. Bharat. Hot electron relaxation times in two-valley semiconductors and their effect on bulk-microwave oscillators[J]. Appl. Phys. Lett., 1967, 11(12): 386~388

    [3] [3] J. G. Ruch, G. S. Kino. Measurement of the velocity-field characteristic of gallium arsenide[J]. Appl. Phys. Lett., 1967, 10(2): 40~42

    [4] [4] H. D. Rees. Calculation of distribution functions by exploiting the stability of the steady state[J]. J. Phys. Chem. Solids, 1969, 30: 643~655

    [5] [5] H. D. Rees. Hot electron effects at microwave frequencies in GaAs[J]. Solid State Commun., 1969, 7: 267~269

    [6] [6] P. J. Bulman, G. S. Hobson, B. C. Taylor. Transferred Electron Devices[M]. London and New York: Academic Press, 1972

    [9] [9] A. Leitenstorfer, S. Hunsche, J. Shah et al.. Femtosecond charge transport in polar semiconductors[J]. Phys. Rev. Lett., 1999, 82(25): 5140~5143

    [10] [10] A. Leitenstorfer, S. Hunsche, J. Shah et al.. Femtosecond high-field transport in compound semiconductors[J]. Phys. Rev. B, 2000, 61(24): 16642~16652

    [11] [11] M. Abe, S. Madhavi, Y. Shimada et al.. Transient carrier velocities in bulk GaAs: Quantitative comparison between terahertz data and ensemble Monte Carlo calculations[J]. Appl. Phys. Lett., 2002, 81(4): 679~681

    [16] [16] Ma Chengju, Chen Yanwei, Xiang Jun et al.. Progress in generation of terahertz radiation[J]. Laser & Optoelectronics Progress, 2007, 44(4): 56~61

    [18] [18] Q. Wu, X.-C. Zhang. Free-space electro-optics sampling of mid-infrared pulses[J]. Appl. Phys. Lett., 1997, 71(10): 1285~1286

    [19] [19] Q. Wu, X.-C. Zhang. 7 terahertz broadband GaP electro-optic sensor[J]. Appl. Phys. Lett., 1997, 70(14): 1784~1786

    [20] [20] A. Leitenstorfer, S. Hunsche, J. Shah et al.. Detectors and sources for ultrabroadband electro-optic sampling: Experiment and theory[J]. Appl. Phys. Lett., 1999, 74(11): 1516~1518

    [21] [21] E. M. Vartianen, K.-E. Peiponen, T. Asakura. Phase retrieval in optical spectroscopy: Resolving optical constants from power spectra[J]. Appl. Spectrosc., 1996, 50(10): 1283~1289

    [22] [22] E. M. Vartiainen, Y. Ino, R. Shimano et al.. Numerical phase correction method for terahertz time-domain reflection spectroscopy[J]. J. Appl. Phys., 2004, 96(8): 4171~4175

    [23] [23] E. Gornov, E. M. Vartiainen, K.-E. Peiponen. Comparison of subtractive Kramers-Kronig analysis and maximum entropy model in resolving phase from finite spectral range reflectance data[J]. Appl. Opt., 2006, 45(25): 6519~6524

    [24] [24] R. Peierls. Bemerkungen zur theorie der metalle[J]. Z. Physik, 1934, 88: 786~791

    [25] [25] D. Pfirsch, E. Spenke. Die effektive masse eines kristallelektrons und das Ehrenfestsche theorem[J]. Z. Physik, 1954, 137:S.309~S.312

    [26] [26] J. B. Krieger, G. J. Iafrate. Quantum transport for Bloch electrons in a spatially homogeneous electric field[J]. Phys. Rev. B, 1987, 35(18): 9644~9658

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    Zhu Yiming, Zhang Dawei, He Boyong, Zhuang Songlin. Strong Band Mixing in Bulk GaAs under High Electric Field Investigated by Time-Domain Terahertz Spectroscopy[J]. Chinese Journal of Lasers, 2009, 36(2): 328

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    Paper Information

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    Received: Sep. 4, 2008

    Accepted: --

    Published Online: Feb. 23, 2009

    The Author Email: Yiming Zhu (ymzhu@usst.edu.cn)

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