Chinese Journal of Lasers, Volume. 36, Issue 2, 328(2009)
Strong Band Mixing in Bulk GaAs under High Electric Field Investigated by Time-Domain Terahertz Spectroscopy
Nonequilibrium transport of carriers in bulk GaAs under very high electric fields is investigated by time-domain terahertz (THz) emission spectroscopy. It is found that the initial peak height of THz emission waveforms (ΔETHz), which are corresponding to the acceleration of electrons in the Γ valley, gradually increases with increasing bias electric fields F0, for F0<50 kV/cm and saturates at ~1 THz above 50 kV/cm. The experimental results show that the effective acceleration mass of electrons under high electric fields significantly increases with increasing fields (30 times at 300 kV/cm than low bias electric fields), most likely due to strong band mixing under very high fields.
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Zhu Yiming, Zhang Dawei, He Boyong, Zhuang Songlin. Strong Band Mixing in Bulk GaAs under High Electric Field Investigated by Time-Domain Terahertz Spectroscopy[J]. Chinese Journal of Lasers, 2009, 36(2): 328