Chinese Journal of Lasers, Volume. 36, Issue 2, 328(2009)

Strong Band Mixing in Bulk GaAs under High Electric Field Investigated by Time-Domain Terahertz Spectroscopy

Zhu Yiming1,2、*, Zhang Dawei1, He Boyong2, and Zhuang Songlin1
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  • 1[in Chinese]
  • 2[in Chinese]
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    Nonequilibrium transport of carriers in bulk GaAs under very high electric fields is investigated by time-domain terahertz (THz) emission spectroscopy. It is found that the initial peak height of THz emission waveforms (ΔETHz), which are corresponding to the acceleration of electrons in the Γ valley, gradually increases with increasing bias electric fields F0, for F0<50 kV/cm and saturates at ~1 THz above 50 kV/cm. The experimental results show that the effective acceleration mass of electrons under high electric fields significantly increases with increasing fields (30 times at 300 kV/cm than low bias electric fields), most likely due to strong band mixing under very high fields.

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    Zhu Yiming, Zhang Dawei, He Boyong, Zhuang Songlin. Strong Band Mixing in Bulk GaAs under High Electric Field Investigated by Time-Domain Terahertz Spectroscopy[J]. Chinese Journal of Lasers, 2009, 36(2): 328

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    Paper Information

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    Received: Sep. 4, 2008

    Accepted: --

    Published Online: Feb. 23, 2009

    The Author Email: Yiming Zhu (ymzhu@usst.edu.cn)

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