Optoelectronic Technology, Volume. 43, Issue 2, 129(2023)

Preparation of Monochrome Micro LED Microdisplay Chip Based on 200 mm Silicon‑based GaN and Analysis of its Batch Production Difficulties

Jinsong PENG1, Jianbing YANG1, Zhao YIN1, Zengfeng WANG1, Qi SONG1, and Yan WU2
Author Affiliations
  • 1Nanjing Guozhao Optoelectronic Technology Co., LTD., Nanjing 2006, CHN
  • 2The 55th Research Institute of China Electronics Technology Group Corporation, Nanjing 10016, CHN
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    Using 200 mm silicon-based GaN epitaxial wafers, wafer-level bonding, thin film transferring and micro-size pixel preparation were studied, and the lighting and display functions of Micro LED microdisplay array were realized. Compared with traditional sapphire-based GaN epitaxial wafers, 200 mm silicon-based GaN epitaxial wafers were more compatible with silicon-based drive wafer sizes, which was conducive to low-cost batch production through wafer bonding process. At the same time, the difficulties and ideas of batch production were analyzed, and it was pointed out that the defect was a problem that needed to be solved urgently.

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    Jinsong PENG, Jianbing YANG, Zhao YIN, Zengfeng WANG, Qi SONG, Yan WU. Preparation of Monochrome Micro LED Microdisplay Chip Based on 200 mm Silicon‑based GaN and Analysis of its Batch Production Difficulties[J]. Optoelectronic Technology, 2023, 43(2): 129

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    Paper Information

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    Received: Mar. 1, 2023

    Accepted: --

    Published Online: Aug. 31, 2023

    The Author Email:

    DOI:10.19453/j.cnki.1005-488x.2023.02.004

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