Using 200 mm silicon-based GaN epitaxial wafers， wafer-level bonding， thin film transferring and micro-size pixel preparation were studied， and the lighting and display functions of Micro LED microdisplay array were realized. Compared with traditional sapphire-based GaN epitaxial wafers， 200 mm silicon-based GaN epitaxial wafers were more compatible with silicon-based drive wafer sizes， which was conducive to low-cost batch production through wafer bonding process. At the same time， the difficulties and ideas of batch production were analyzed， and it was pointed out that the defect was a problem that needed to be solved urgently.