Spectroscopy and Spectral Analysis, Volume. 30, Issue 7, 1995(2010)
Calculation of Dislocation Destiny Using X-Ray Diffraction for 4H-SiC Homoepitaxial Layers
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JIA Ren-xu, ZHANG Yu-ming, ZHANG Yi-men, GUO Hui. Calculation of Dislocation Destiny Using X-Ray Diffraction for 4H-SiC Homoepitaxial Layers[J]. Spectroscopy and Spectral Analysis, 2010, 30(7): 1995
Paper Information
Received: Jun. 26, 2009
Accepted: --
Published Online: Jan. 26, 2011
The Author Email: JIA Ren-xu (rxjia@mail.xidian.edu.cn)
CSTR:32186.14.
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