[1] [1] Shao Ping, Xia Lan, Zhao Dongfeng, et al. Measurement and debugging of wedge-shaped lens in high power laser facility［J］. Chinese J Lasers, 2015, 42(4): 0408006.

[2] [2] Pan Xingchen, Tao Hua, Liu Cheng, et al. Application of iterative algorithm based on phase modulation in high power laser facilities［J］. Chinese J Lasers, 2016, 43(1): 0108001.

[3] [3] Xu Qiao, Wang Jian, Ma Ping, et al. Progress of advanced optical manufactuing technology［J］. High Power Laser and Particle Beams, 2013, 25(12): 3098-3105.

[4] [4] Zhang X, Zhou W, Dai W J, et al. Surface phase defects induced downstream laser intensity modulation in high-power laser facility［J］. High Power Laser Science and Engineering, 2016, 4(1): e6.

[5] [5] Rambo P, Schwarz J, Kimmel M, et al. Development of high damage threshold laser-machined apodizers and gain filters for laser applications［J］. High Power Laser Science and Engineering, 2016, 4(3): e32.

[6] [6] Liu H J, Feng Z Y, Huang X W, et al. Study on purification and application of novel precipitant for ceria-based polishing powder［J］. Journal of Rare Earths, 2013, 31(2): 174-179.

[7] [7] Salleh S, Sudin I, Awang A. Effects of non-spherical colloidal silica slurry on Al-NiP hard disk substrate CMP application［J］. Applied Surface Science, 2016, 360: 59-68.

[8] [8] Hong J, Liu X H, Liu Y L, et al. Removal rate and surface quality of the GLSI silicon substrate during the CMP process［J］. Microelectronic Engineering, 2017, 168: 76-81.

[9] [9] Peedikakkandy L, Kalita L, Kavle P, et al. Preparation of spherical ceria coated silica nanoparticle abrasives for CMP application［J］. Applied Surface Science, 2015, 357: 1306-1312.

[10] [10] Tsai T H, Yen S C. Localized corrosion effects and modifications of acidic and alkaline slurries on copper chemical mechanical polishing［J］. Applied Surface Science, 2003, 210(3/4): 190-205.

[11] [11] Wang Y G, Zhang L C, Biddut A. Chemical effect on the material removal rate in the CMP of silicon wafers［J］. Wear, 2011, 270(3/4): 312-316.

[12] [12] Lim G, Lee J H, Kim J, et al. Effects of oxidants on the removal of tungsten in CMP process［J］. Wear, 2004, 257(9/10): 863-868.

[13] [13] Lee D W, Kim N H, Chang E G. Effect of nonionic surfactants on the stability of alumina slurry for Cu CMP［J］. Materials Science and Engineering: B, 2005, 118(1/2/3): 293-300.

[14] [14] Asghar K, Qasim M, Nelabhotla D M, et al. Effect of surfactant and electrolyte on surface modification of c-plane GaN substrate using chemical mechanical planarization (CMP) process［J］. Colloids and Surfaces A, 2016, 497: 133-145.

[15] [15] Penta N K, Amanapu H P, Peethala B C, et al. Use of anionic surfactants for selective polishing of silicon dioxide over silicon nitride films using colloidal silica-based slurries［J］. Applied Surface Science, 2013, 283: 986-992.

[16] [16] Zhao Yadong, Liu Yuling, Luan Xiaodong, et al. Effect of polishing pressure and surfactant on the uniformity in copper CMP［J］. Semiconductor Technology, 2017, 42(2): 119-123, 152.

[17] [17] Zhang Z F, Liu W L, Song Z T. Particle size and surfactant effects on chemical mechanical polishing of glass using silica-based slurry［J］. Applied Optics, 2010, 49(28): 5480-5485.

[18] [18] Zhang Z F, Liu W L, Song Z T. Effect of abrasive particle concentration on preliminary chemical mechanical, polishing of glass substrate［J］. Microelectronic Engineering, 2010, 87(11): 2168-2172.

[19] [19] Wu Yuanyuan, Yi Shouzhi, Wei Zhijie, et al. Study on suspension property and redispersibility of CeO2 slurry［J］. China Powder Science and Technology, 2015, 21(2): 57-60.