Researching | Sensing with extended gate negative capacitance ferroelectric field-effect transistors

Chip, Volume. 3, Issue 1, 100074(2024)

Sensing with extended gate negative capacitance ferroelectric field-effect transistors

Honglei Xue^1、†, Yue Peng^2、†, Qiushi Jing¹, Jiuren Zhou², Genquan Han^2、*, and Wangyang Fu^1、**

Author Affiliations

¹Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China

²School of Microelectronics, Xidian Univeristy, Xi'an 710071, China

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Honglei Xue, Yue Peng, Qiushi Jing, Jiuren Zhou, Genquan Han, Wangyang Fu. Sensing with extended gate negative capacitance ferroelectric field-effect transistors[J]. Chip, 2024, 3(1): 100074

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Paper Information

Category: Research Articles

Received: Aug. 23, 2023

Accepted: Nov. 13, 2023

Published Online: Jan. 23, 2025

The Author Email: Genquan Han (gqhan@xidian.edu.cn), Wangyang Fu (fwy2018@mail.tsinghua.edu.cn)

DOI:10.1016/j.chip.2023.100074

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