Laser & Optoelectronics Progress, Volume. 60, Issue 17, 1716002(2023)
Preparation and Performance of As40Se60 Connective Layer for Sulfur Substrate
Fig. 2. Schematic diagram of molecular adsorption model. (a) Physical adsorption; (b) chemical adsorption
Fig. 3. Unit cell and section of each material. (a) As2Se3 unit cell and section; (b) ZnS unit cell and section; (c) ZnSe unit cell and section; (d) Ge unit cell and section
Fig. 4. Composite interface model. (a) ZnS/As2Se3; (b) ZnSe/As2Se3; (c) Ge/As2Se3
Fig. 5. ZnS/As2Se3 temperature potential energy change plot. (a) Temperature change; (b) potential energy change
Fig. 7. Total energy and adsorption energy change plots. (a) Total energy change plot; (b) adsorption energy change plot
Fig. 8. Adhesion test results. (a) Ge/As40Se60; (b) ZnS/As40Se60; (c) ZnSe/As40Se60
Fig. 10. Variation of total energy and adsorption energy. (a) Variation of total energy; (b) variation of adsorption energy
|
Get Citation
Copy Citation Text
Shunguan Zhang, Shan Li, Zhuo Liu, Shaoyu Zeng, Kebin Tang. Preparation and Performance of As40Se60 Connective Layer for Sulfur Substrate[J]. Laser & Optoelectronics Progress, 2023, 60(17): 1716002
Category: Materials
Received: Jun. 15, 2022
Accepted: Aug. 29, 2022
Published Online: Sep. 13, 2023
The Author Email: Shan Li (624814911@qq.com)