Microelectronics, Volume. 51, Issue 3, 424(2021)

Analysis of Factors Affecting the Flatness of On-Resistance for 30 V UMOS

ZHOU Xi and FENG Quanyuan
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  • [in Chinese]
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    References(3)

    [1] [1] ZHANG B, ZHANG W T, QIAO M, et al. Concept and design of super junction devices [J]. J Semicond, 2018, 39(2): 5-16.

    [9] [9] MELKONYAN S V, ASRIYAN H V, SURMALYAN A V, et al. Electron mobility variance in the presence of an electric field [C] // 22nd ICNF. Montpellier, France. 2013: 1-4.

    [10] [10] GAMIZ F, JA L V, ROLDAN J B, et al. Influence of the doping profile on electron mobility in a MOSFET [J]. IEEE Trans Elec Dev, 1996, 43(11): 2023-2025.

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    ZHOU Xi, FENG Quanyuan. Analysis of Factors Affecting the Flatness of On-Resistance for 30 V UMOS[J]. Microelectronics, 2021, 51(3): 424

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    Paper Information

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    Received: Aug. 20, 2020

    Accepted: --

    Published Online: Mar. 11, 2022

    The Author Email:

    DOI:10.13911/j.cnki.1004-3365.200378

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