Journal of Semiconductors, Volume. 44, Issue 6, 062803(2023)

Rapid epitaxy of 2-inch and high-quality α-Ga2O3 films by mist-CVD method

Xiaojie Wang1, Wenxiang Mu1,2、*, Jiahui Xie1, Jinteng Zhang1, Yang Li1、**, Zhitai Jia1,3, and Xutang Tao1,2
Author Affiliations
  • 1State Key Laboratory of Crystal Materials, Institute of novel semiconductors, Institute of Crystal materials, Shandong University, Jinan 250100, China
  • 2Shenzhen Research Institute of Shandong University, Shenzhen 518057, China
  • 3Shandong Research Institute of Industrial Technology, Jinan 250101, China
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    Xiaojie Wang, Wenxiang Mu, Jiahui Xie, Jinteng Zhang, Yang Li, Zhitai Jia, Xutang Tao. Rapid epitaxy of 2-inch and high-quality α-Ga2O3 films by mist-CVD method[J]. Journal of Semiconductors, 2023, 44(6): 062803

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    Paper Information

    Category: Articles

    Received: Jan. 30, 2023

    Accepted: --

    Published Online: Jul. 6, 2023

    The Author Email: Wenxiang Mu (mwx@sdu.edu.cn), Yang Li (yangli@sdu.edu.cn)

    DOI:10.1088/1674-4926/44/6/062803

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