Acta Physica Sinica, Volume. 68, Issue 18, 187104-1(2019)
Fig. 1. Energy levels of Be acceptors doped in GaAs bulk.掺杂在GaAs材料中Be受主的能级分布及跃迁
Fig. 2. Far-infrared absorption spectrum for the sample GaAs:Be at 4.2 K.在4.2 K温度下, GaAs:Be样品的远红外吸收谱
Fig. 3. PL spectrum of sample GaAs:Be at 4.2 K.在4.2 K温度下, GaAs:Be样品的PL光谱
Fig. 4. Raman spectrum of the sample GaAs:Be at 4.2 K.在4.2 K温度下, GaAs:Be样品的Raman光谱
Comparison of transition energies of Be accepters in GaAs.
掺杂在GaAs中Be受主的跃迁能量的对照
Comparison of transition energies of Be accepters in GaAs.
掺杂在GaAs中Be受主的跃迁能量的对照
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Wei-Min Zheng, Hai-Bei Huang, Su-Mei Li, Wei-Yan Cong, Ai-Fang Wang, Bin Li, Ying-Xin Song.
Received: Feb. 26, 2019
Accepted: --
Published Online: Jun. 28, 2020
The Author Email: Li Bin (binli@mail.sitp.ac.cn)