Acta Physica Sinica, Volume. 68, Issue 18, 187104-1(2019)

Transitions between Be acceptor levels in GaAs bulk

Wei-Min Zheng1、*, Hai-Bei Huang2, Su-Mei Li3, Wei-Yan Cong1, Ai-Fang Wang1, Bin Li4、*, and Ying-Xin Song5
Author Affiliations
  • 1School of Space Science and Physics, Shandong University (Weihai), Weihai 264209, China
  • 2School of Chemistry and Chemical Engineering, Shandong University, Jinan 250100, China
  • 3School of Information Engineering, Shandong University (Weihai), Weihai 264209, China
  • 4Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
  • 5Jinan Semiconductor Research Institute, Jinan 250014, China
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    Figures & Tables(5)
    Energy levels of Be acceptors doped in GaAs bulk.掺杂在GaAs材料中Be受主的能级分布及跃迁
    Far-infrared absorption spectrum for the sample GaAs:Be at 4.2 K.在4.2 K温度下, GaAs:Be样品的远红外吸收谱
    PL spectrum of sample GaAs:Be at 4.2 K.在4.2 K温度下, GaAs:Be样品的PL光谱
    Raman spectrum of the sample GaAs:Be at 4.2 K.在4.2 K温度下, GaAs:Be样品的Raman光谱
    • Table 1.

      Comparison of transition energies of Be accepters in GaAs.

      掺杂在GaAs中Be受主的跃迁能量的对照

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      View in Article

      Table 1.

      Comparison of transition energies of Be accepters in GaAs.

      掺杂在GaAs中Be受主的跃迁能量的对照

      跃迁 谱线 跃迁能量
      实验值理论值
      文献[12, 15] 本文文献[25]
      /cm–1/cm–1/meV/meV
      G135134.4213516.7414.29
      D167166.7616720.7118.47
      C184182.3018322.6920.34
      E160 (PL) 161 (Raman) 19.84 19.96 18.04
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    Wei-Min Zheng, Hai-Bei Huang, Su-Mei Li, Wei-Yan Cong, Ai-Fang Wang, Bin Li, Ying-Xin Song. Transitions between Be acceptor levels in GaAs bulk[J]. Acta Physica Sinica, 2019, 68(18): 187104-1

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    Paper Information

    Received: Feb. 26, 2019

    Accepted: --

    Published Online: Jun. 28, 2020

    The Author Email: Li Bin (binli@mail.sitp.ac.cn)

    DOI:10.7498/aps.68.20190254

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