Optoelectronic Technology, Volume. 41, Issue 1, 70(2021)
Research Progress of a⁃IGZO TFT Based on Dual⁃active Layer
Figures & Tables(7)
Fig. 2. The interaction between active layer's surface and etching medium
Fig. 4. The comparison of
Fig. 5. Schematic of
Table 1. The results of PBT and NBT
View tableView in ArticleTable 1. The results of PBT and NBT
测试条件 单层Vth 双层Vth PBT 2.48 V 1.26 V NPT -6.46 V -3.31 V
Table 2. The electrical performance of a⁃IGZO TFTs with different percentage of oxygen
View tableView in ArticleTable 2. The electrical performance of a⁃IGZO TFTs with different percentage of oxygen
氧含量/(%) µ /(cm2·V-1·s-1) Vth /V Ion/Ioff (105) 0 72.6 -0.7 0.005 3 38.1 0.3 0.06 7 9.6 1.4 0.3 10 10.4 1.0 2 12 3.9 1.7 1 15 5.7 1.5 1
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Yanmei LUO, Zhoushuo CHU, Jian WANG, Ke HU, Botao SUN. Research Progress of a⁃IGZO TFT Based on Dual⁃active Layer[J]. Optoelectronic Technology, 2021, 41(1): 70
Paper Information
Category: Study Report
Received: Oct. 9, 2020
Accepted: --
Published Online: Jul. 14, 2021
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