Optoelectronic Technology, Volume. 41, Issue 1, 70(2021)
Research Progress of a⁃IGZO TFT Based on Dual⁃active Layer
The research progress of a-IGZO was reviewed ， as well as the high stability mechanism， preparation process， the element ratio between two layers， adulteration method and process parameters. In addition， the effect of dual-active layer on TFT's properties and the improved methods were comprehensively and thoroughly analyzed. Then， the future direction of a-IGZO technology was prospected.
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Yanmei LUO, Zhoushuo CHU, Jian WANG, Ke HU, Botao SUN. Research Progress of a⁃IGZO TFT Based on Dual⁃active Layer[J]. Optoelectronic Technology, 2021, 41(1): 70
Paper Information
Category: Study Report
Received: Oct. 9, 2020
Accepted: --
Published Online: Jul. 14, 2021
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