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Journal of Synthetic Crystals, Volume. 51, Issue 12, 2137(2022)

Research Progress on the Growth of 4H-SiC Crystal by PVT Method and the Defect of Polytype Inclusions

WANG Yu1,2,3、*, GU Peng2, FU Jun3, WANG Penggang2, LEI Pei3, and YUAN Li3
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  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    WANG Yu, GU Peng, FU Jun, WANG Penggang, LEI Pei, YUAN Li. Research Progress on the Growth of 4H-SiC Crystal by PVT Method and the Defect of Polytype Inclusions[J]. Journal of Synthetic Crystals, 2022, 51(12): 2137

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    Paper Information

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    Received: Jul. 4, 2022

    Accepted: --

    Published Online: Feb. 18, 2023

    The Author Email: WANG Yu (wangyu@sctlxd.com)

    DOI:

    CSTR:32186.14.

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology