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Frontiers of Optoelectronics, Volume. 5, Issue 2, 127(2012)

High-performance and current crowding-free InGaN-GaN based LEDs integrated by an electrically-reverse-connected Schottky diode and a Mg-delta doped p-GaN

Sei-Min KIM, Seon-Ho JANG, and Ja-Soon JANG*
Author Affiliations
  • Department of Electronic Engineering, LED-IT Fusion Technology Research Center (LIFTRC), Yeungnam University, Gyeongbuk 712-749, Korea
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    Sei-Min KIM, Seon-Ho JANG, Ja-Soon JANG. High-performance and current crowding-free InGaN-GaN based LEDs integrated by an electrically-reverse-connected Schottky diode and a Mg-delta doped p-GaN[J]. Frontiers of Optoelectronics, 2012, 5(2): 127

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    Paper Information

    Received: Nov. 28, 2011

    Accepted: Dec. 8, 2011

    Published Online: Feb. 23, 2013

    The Author Email: Ja-Soon JANG (jsjang@ynu.ac.kr)

    DOI:10.1007/s12200-012-0256-z

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology