[1] [1] WARREN M E, GOURLEY P L, HADLEY G R, et al. On-axis far-field emission from two-dimensional phase-locked vertical cavity surface-emitting laser arrays with an integrated phase-corrector［J］. Applied Physics Letters, 1992, 61(13): 1484-1486.

[2] [2] HAGLUND , HASHEMI E, BENGTSSON J, et al. Progress and challenges in electrically pumped GaN-based VCSELs［C］//SPIE Photonics Europe. Proc SPIE 9892, Semiconductor Lasers and Laser Dynamics Ⅶ, Brussels, Belgium. 2016, 9892: 161-180.

[3] [3] YANG X, LI M X, ZHAO G W, et al. Small-sized lithographic single-mode VCSELs with high-power conversion efficiency［C］//SPIE OPTO. Proc SPIE 9381, Vertical-Cavity Surface-Emitting Lasers XIX, San Francisco, California, USA. 2015, 9381: 197-202.

[4] [4] SHI J W, CHI K L, CHANG J H, et al. Single-mode vertical-cavity surface-emitting laser array with high power and narrow far-field divergence angle［J］. IEEE Photonics Journal, 2013, 5(6): 1502508.

[5] [5] SHIMADA R, MORKO H. Wide bandgap semiconductor-based surface-emitting lasers: recent progress in GaN-based vertical cavity surface-emitting lasers and GaN-/ZnO-based polariton lasers［J］. Proceedings of the IEEE, 2010, 98(7): 1220-1233.

[7] [7] GEELS R S, CORZINE S W, SCOTT J W, et al. Low threshold planarized vertical-cavity surface-emitting lasers［J］. 1990: PD31.

[8] [8] BASHIR B. Designing of high reflectance distributed Bragg reflectors (DBRs), mirrors using AlGaInN material system in the UV wavelength range［R］. University of Gavle, 2009.

[9] [9] NAKADA N, NAKAJI M, ISHIKAWA H, et al. Improved characteristics of InGaN multiple-quantum-well light-emitting diode by GaN/AlGaN distributed Bragg reflector grown on sapphire［J］. Applied Physics Letters, 2000, 76(14): 1804-1806.

[10] [10] LI P C, ZHANG Y T, CHEN L, et al. Optimization design and preparation of near ultraviolet AlGaN/GaN distributed Bragg reflectors［J］. Superlattices and Microstructures, 2018, 122: 661-666.

[11] [11] LI P C, HAN X, YAN L, et al. The preparation of different pairs near-ultraviolet AlGaN/GaN DBRs with AlN interlayer［J］. Materials Science in Semiconductor Processing, 2018, 80: 162-166.

[12] [12] MOUDAKIR T, GAUTIER S, SURESH S, et al. Suppression of crack generation in AlGaN/GaN distributed Bragg reflectors grown by MOVPE［J］. Journal of Crystal Growth, 2013, 370: 12-15.

[13] [13] CARLIN J F, ILEGEMS M. High-quality AlInN for high index contrast Bragg mirrors lattice matched to GaN［J］. Applied Physics Letters, 2003, 83(4): 668-670.

[14] [14] KURAMOTO M, KOBAYASHI S, AKAGI T, et al. Enhancement of slope efficiency and output power in GaN-based vertical-cavity surface-emitting lasers with a SiO2-buried lateral index guide［J］. Applied Physics Letters, 2018, 112(11): 111104.

[15] [15] CHUNG R B, WU F, SHIVARAMAN R, et al. Growth study and impurity characterization of AlxIn1-x N grown by metal organic chemical vapor deposition［J］. Journal of Crystal Growth, 2011, 324(1): 163-167.

[17] [17] NISHINAKA J, FUNATO M, KIDO R, et al. InGaN/AlGaN stress compensated superlattices coherently grown on semipolar (1122) GaN substrates［J］. Physica Status Solidi (b), 2016, 253(1): 78-83.

[18] [18] ANGERER H, BRUNNER D, FREUDENBERG F, et al. Determination of the Al mole fraction and the band gap bowing of epitaxial AlxGa1-xN films［J］. Applied Physics Letters, 1997, 71(11): 1504-1506.

[20] [20] VURGAFTMAN I, MEYER J R. Band parameters for nitrogen-containing semiconductors［J］. Journal of Applied Physics, 2003, 94(6): 3675-3696.