After adjusting the component parameters of the designed AlGaInN/InGaN DBR structure with a central wavelength of 520 nm, strain compensation was realized and the overall strain of DBR turned to 0. The transmission matrix method was used to calculate the reflectance spectra of Al0.7Ga0.3-xInxN/InGaN DBR, Al0.8Ga0.2-xInxN/InGaN DBR, and Al0.9Ga0.1-xInxN/InGaN DBR. By comparing the structure parameters of DBR, the structure and reflection performance of DBR are optimized. First, high and low refractive index layer growth sequence was compared for Al0.8Ga0.14In0.06N/In0.123Ga0.877N DBR. For DBR with first grown high refractive index layer, the reflectance is as high as 99.61%, while for DBR first grown low refractive index layer, the reflectance is only 97.73%. Then, by comparing the odd-layer DBR and even-layer DBR, it is found that the reflection spectra of the two layers are almost identical, and there is no significant difference. By comparing the periods of DBR, it is found that the reflectance increases obviously with the increase of period number between 20 and 30 pairs, while the reflectance increases slowly with the increase of period number between 30 and 40 pairs. At last, the influence of the material components on the reflection spectrum is studied. It is found that the DBR with high Al component has a large refractive index difference and better reflection performance, while the lower content of In in the same Al component AlGaInN, the higher the reflectivity. Due to the possible deviation of thickness and component in the preparation of DBR, the changes of reflection spectra resulted from the deviation of thickness and components were simulated. It is found that the reflection spectrum is red-shifted or blue-shifted by 4 nm to 5 nm when the layer thickness of high or low refractive index is increased or decreased by 1 nm. While the component deviations caused significant changes in high anti-band bandwidth and reflectivity at central wavelength. The study in this paper provides some theoretical reference for the design and preparation of AlGaInN/InGaN DBR.