Microelectronics, Volume. 52, Issue 1, 150(2022)
Statistical Analysis of Total Ionizing Dose Effect on Flash Memory Floating Gate Cells
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LIANG Runcheng, CHEN Faguo, GUO Rong, HAN Yi, LIU Zhaoxing, ZHANG Jing, ZHAO Ri. Statistical Analysis of Total Ionizing Dose Effect on Flash Memory Floating Gate Cells[J]. Microelectronics, 2022, 52(1): 150
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Received: Jun. 20, 2021
Accepted: --
Published Online: Jun. 14, 2022
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