Journal of Semiconductors, Volume. 42, Issue 11, 112001(2021)

Epitaxial growth of CsPbBr3/PbS single-crystal film heterostructures for photodetection

Yifan Wang1,2, Xuanze Li1,2, Pei Liu1,2, Jing Xia1,2, and Xiangmin Meng1,2
Author Affiliations
  • 1Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China
  • 2Centre of Material Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
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    Figures & Tables(7)
    (Color online) Schematic diagram of the tube furnace setup for the growth of CsPbBr3/PbS heterostructures.
    (Color online) (a) SEM image of PbS single-crystal films epitaxially grown on NaCl (100) substrates. (b) XRD patterns of the PbS films on NaCl (100) crystals (red) and reference data (JPCDS, PDF#05-0592, black).
    (Color online) (a, b) Cross-section and top-view SEM images of CsPbBr3 films epitaxially grown on PbS (100) films. (c) XRD patterns of the CsPbBr3/PbS heterostructures and standard cards of CsPbBr3 and PbS. (d) Magnified XRD pattern in (a).
    (Color online) (a, b) Experimental results of pole figures from EBSD results for CsPbBr3 and PbS. (c) EBSD orientation map of the CsPbBr3 films epitaxial growth on PbS.
    (Color online) (a) UV–visible–IR absorption spectra and (b) PL spectra of pristine CsPbBr3 and CsPbBr3/PbS heterostructures.
    (Color online) Photodetector based on CsPbBr3/PbS film heterostructures. (a) I–V curves of the film photodetector in the dark and under 450 nm laser illumination with different light intensities. The inset is the schematic diagram of the device. (b) Light intensity dependence of the photocurrent at the bias of 5 V and corresponding fitting curve. (c, d) Time-resolved photoresponse and the enlarged portion of the device at the bias of 5 V and light intensity of 40 mW/cm2.
    (Color online) (a) Schematic diagram of the CsPbBr3/PbS p–n heterojunction photodetector under laser illumination. (b) Dark current and photocurrent of the CsPbBr3/PbS heterostructure detectors under a 532, 785 and 1550 nm light with a power density of 40 mW/cm2.
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    Yifan Wang, Xuanze Li, Pei Liu, Jing Xia, Xiangmin Meng. Epitaxial growth of CsPbBr3/PbS single-crystal film heterostructures for photodetection[J]. Journal of Semiconductors, 2021, 42(11): 112001

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    Paper Information

    Category: Articles

    Received: Apr. 1, 2021

    Accepted: --

    Published Online: Nov. 12, 2021

    The Author Email:

    DOI:10.1088/1674-4926/42/11/112001

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