Chinese Journal of Lasers, Volume. 26, Issue 2, 181(1999)

Picosecond Infrared Laser Stimulated Luminescence in Electron Trapping Materials

[in Chinese]1, [in Chinese]1, [in Chinese]2, [in Chinese]2, [in Chinese]2, [in Chinese]2, and [in Chinese]2
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    References(6)

    [2] [2] J. Lindmayer. A new erasable optical memory. Solid State Technology, 1988, 31(8):135~138

    [3] [3] S. Jutamulia, G. M. Storti, W. Seiderman et al.. Use of electron-trapping materials in optical signal processing. IV. Parallel incoherent image subraction. Appl. Opt., 1993, 32(5):743~745

    [4] [4] Z. Wen, N. H. Farhat, Z. J. Zhao. Dynamics of electron-trapping materials for use in optoelectronic neurocomputing. Appl. Opt., 1993, 32(35):7251~7265

    [5] [5] Chen Shuchun, Dai Fengmei. Up-conversion and optical storage properties of SrS:Eu,Sm in PMMA. Chinese J. Lasers, 1993, B2(1):67~69

    [10] [10] Colourless Optical Glass (GB 903-65). Beijing. 1966. 17

    [11] [11] Y. Tsuchiya, E.Inuzuka. Characteristics of picosecond streak camera systems. J. Inst. Telev. Engrs. Japan, 1981, 35(3):208~214

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Picosecond Infrared Laser Stimulated Luminescence in Electron Trapping Materials[J]. Chinese Journal of Lasers, 1999, 26(2): 181

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    Paper Information

    Category: materials and thin films

    Received: Oct. 14, 1997

    Accepted: --

    Published Online: Aug. 9, 2006

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