[1] Tsai S C, Tsai T C, Law P C et al. High pumping-efficiency L-band erbium-doped fiber ASE source using double-pass bidirectional-pumping configuration[J]. IEEE Photonics Technology Letters, 15, 197-199(2003).

[2] Huang W C, Ming H, Xie J P et al. High efficiency broad bandwidth erbium-doped superfluorescent fiber source[J]. Chinese Optics Letters, 1, 311-313(2003). http://www.opticsjournal.net/Articles/Abstract?aid=OJ060606000733RnTqWs

[3] Hall D C, Burns W K, Moeller R P. High-stability Er 3+-doped superfluorescent fiber sources[J]. Journal of Lightwave Technology, 13, 1452-1460(1995).

[4] Chen H Y, Zheng Y, Wang X X et al. Influence of mean wavelength on scale factor of fiber optic gyroscope[J]. Chinese Journal of Lasers, 46, 0306002(2019).

[5] Yang B, Ming H, Guo Y et al. Flattening spectrum of a broadband and wavelength stable erbium doped superfluorescent fiber source[J]. Chinese Physics Letters, 16, 356-357(1999).

[6] McMillen B, Jewart C, Buric M P et al. Fiber Bragg grating vacuum sensors[J]. Applied Physics Letters, 87, 234101(2005).

[7] Geng J X, Cao G D, Luo Y et al. Experimental study of a fiber grating external-cavity semiconductor laser[J]. Chinese Journal of Lasers, 27, 488-492(2000).

[8] Zhou H Q, Wu Z M, Xia G Q. Influence of the temperature variation on the lasing wavelength of the fiber grating external cavity semiconductor laser[J]. Laser Journal, 24, 65-66(2003).

[9] Hu S S, Li Y, Jiang Q J et al. Wavelength locker of pump laser based on dual fiber Bragg grating[J]. Chinese Journal of Lasers, 35, 44-48(2008).

[10] Huang Y Z, Li Y, Zhu H Q et al. Theoretical investigation into spectral characteristics of a semiconductor laser with dual-FBG external cavity[J]. Optics Communications, 284, 2960-2965(2011).

[11] Sun G W, Wei F, Zhang L et al. Low-noise external cavity semiconductor lasers based on polarization-maintaining fiber Bragg gratings[J]. Chinese Journal of Lasers, 45, 0601004(2018).

[12] Li H, Du J Y, Qu Y et al. Low power dissipation 980 nm single mode pumping source laser with wavelength stabilization[J]. Chinese Journal of Luminescence, 37, 33-37(2016).

[13] Klein S, Giesberts M, Traub M et al. Frequency stabilization of multimode diode lasers with fiber Bragg gratings. [C]∥2019 IEEE High Power Diode Lasers and Systems Conference (HPD), October 9-10, 2019, Coventry, United Kingdom. New York: IEEE, 21-22(2019).

[14] Feng S W, Xie X S, Lu C Z et al. Measurement and study on thermal characteristics of semiconductor devices by electrical method[J]. Chinese Journal of Semiconductors, 20, 358-364(1999).

[15] Henry C. Theory of the linewidth of semiconductor lasers[J]. IEEE Journal of Quantum Electronics, 18, 259-264(1982).

[16] Dong X W, Liu W K, Wang D Y et al. Study on Fabry-Perot cavity consisting of two chirped fiber Bragg gratings[J]. Optical Fiber Technology, 18, 209-214(2012).

[17] Chen S J, Li Y, Yuan W R et al. Improvement of thespectral characteristics of 980 nm semiconductor laser[J]. Acta Photonica Sinica, 44, 0114003(2015).

[18] Wang Z Q, Yao S, Cui B F et al. Thermal characteristic of high beam quality laser diode array[J]. Chinese Journal of Lasers, 37, 2497-2501(2010).

[19] Both W, Piprek J. Thermal resistance of ridge-waveguide laser diodes based on GaAs, GaSb or InP[J]. Journal of Thermal Analysis, 37, 61-71(1991).

[20] Zhao B Y, Jing H Q, Zhong L et al. Improving slow-axis laser beam quality of semiconductor laser with edge adiabatic package[J]. Chinese Journal of Lasers, 47, 0105002(2020).

[21] Xi Y, Schubert E F. Junction-temperature measurement in GaN ultraviolet light-emitting diodes using diode forward voltage method[J]. Applied Physics Letters, 85, 2163-2165(2004).

[22] Kondow M, Kitatani T, Nakahara K et al. Temperature dependence of lasing wavelength in a GaInNAs laser diode[J]. IEEE Photonics Technology Letters, 12, 777-779(2000).

[23] Zhang Y G, He Y J, Nan K J et al. Thermal analysis and characterization of semiconductor lasers[J]. Chinese Journal of Rare Metals, 28, 551-553(2004).