Photonics Research, Volume. 7, Issue 8, 926(2019)
Low threshold anti-Stokes Raman laser on-chip
Fig. 1. (a) Energy level diagram of redshifted SRS and blueshifted SARS with the vibrational state of the gain medium.
Fig. 2. COMSOL Multiphysics FEM simulation results. (a) Optical field distribution in the coated toroidal microcavity. The major and minor diameters of the silica toroid are 55 and 6 μm, respectively. The refractive indices of coatings are 1.454 for undoped and 1.520 for metal-doped layer (either Zr or Ti) with thickness of 400 nm. (b) Fundamental mode area as a function of the refractive index of coating (
Fig. 3. (a) SEM image of a solgel-coated device indicating major (
Fig. 4. Intrinsic
Fig. 5. Emission spectra of (a) undoped, (b) Zr-, and (c) Ti-doped devices with similar coupled power (
Fig. 6. Generated SRS (hollow symbol) and SARS (solid symbol) shift from various devices. As expected, the Stokes and anti-Stokes shifts are identical, providing evidence that the upconverted photons are the result of the anti-Stokes process.
Fig. 7. (a) SRS and (b) SARS power as a function of the coupled power into the devices; (c) ratio of SARS versus SRS power from various devices.
Fig. 8. (a) Threshold and (b) efficiency values of SRS, and (c) threshold and (d) efficiency values of SARS from various devices.
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Hyungwoo Choi, Dongyu Chen, Fan Du, Rene Zeto, Andrea Armani, "Low threshold anti-Stokes Raman laser on-chip," Photonics Res. 7, 926 (2019)
Category: Nonlinear Optics
Received: May. 13, 2019
Accepted: Jun. 15, 2019
Published Online: Jul. 26, 2019
The Author Email: Andrea Armani (armani@usc.edu)