Chinese Optics Letters, Volume. 23, Issue 8, 081401(2025)

High-power single-mode 1.3 µm semiconductor laser with a photonic crystal structure fabricated by standard lithography

Ningning Chen1,2, Peng Cao1, Yingqiu Dai1,3, Guangliang Sun1,2, Zeyu Wang1,2, Haodong Xuan1,2, Hailing Wang1,2,4、*, and Wanhua Zheng1,2,3,4、**
Author Affiliations
  • 1Laboratory of Solid-State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 2College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
  • 3College of Future Technology, University of Chinese Academy of Sciences, Beijing 101408, China
  • 4Weifang Academy of Advanced Opto-Electronic Circuits, Weifang 261021, China
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    Figures & Tables(11)
    (a) Schematic of the PC laser. (b) Cross-sectional view of the LPC. (c) Cross-sectional view of the TPC.
    Calculated (a) R and L versus hs. (b) R and L versus Ns.
    Calculated (a) R versus λ and m. (b) L versus λ and m.
    1D multilayer waveguide structure equated by the EIM.
    Calculated photon energy bands of (a) TPC1 and (b) TPC2, and the β of the guided modes within the main ridge waveguide.
    Simulated light field distributions of different lateral modes. (a) The single broad ridge waveguide. (b) The broad ridge waveguide with TPCs on both sides.
    SEM images of the fabricated (a) LPC and (b) TPC.
    Measured L-I-V curves of (a) the FP laser and (b) the PC laser at a temperature of 25°C.
    (a) Measured HFF distribution of the FP laser. (b) Measured HFF distribution of the PC laser. (c) Calculated HFF distribution of the PC laser.
    Measured spectra of (a) the FP laser and (b) the PC laser.
    • Table 1. Comparison of the Output Power and SMSR Characteristics With Different Reported Slotted Lasers

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      Table 1. Comparison of the Output Power and SMSR Characteristics With Different Reported Slotted Lasers

      Ref.Output powerSMSR
      [16]>36 mW at 200 mA> 40 dB
      [18]12 mW at 140 mA> 35 dB
      [19]>20 mW at 100 mA> 40 dB
      [20]15 mW at 100 mA38 dB
      This work120 mW at 700 mA41.74 dB
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    Ningning Chen, Peng Cao, Yingqiu Dai, Guangliang Sun, Zeyu Wang, Haodong Xuan, Hailing Wang, Wanhua Zheng, "High-power single-mode 1.3 µm semiconductor laser with a photonic crystal structure fabricated by standard lithography," Chin. Opt. Lett. 23, 081401 (2025)

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    Paper Information

    Category: Lasers, Optical Amplifiers, and Laser Optics

    Received: Jan. 16, 2025

    Accepted: Apr. 2, 2025

    Published Online: Jul. 15, 2025

    The Author Email: Hailing Wang (hlwang07@semi.ac.cn), Wanhua Zheng (whzheng@semi.ac.cn)

    DOI:10.3788/COL202523.081401

    CSTR:32184.14.COL202523.081401

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