Chinese Optics Letters, Volume. 23, Issue 8, 081401(2025)
High-power single-mode 1.3 µm semiconductor laser with a photonic crystal structure fabricated by standard lithography
Fig. 1. (a) Schematic of the PC laser. (b) Cross-sectional view of the LPC. (c) Cross-sectional view of the TPC.
Fig. 5. Calculated photon energy bands of (a) TPC1 and (b) TPC2, and the β of the guided modes within the main ridge waveguide.
Fig. 6. Simulated light field distributions of different lateral modes. (a) The single broad ridge waveguide. (b) The broad ridge waveguide with TPCs on both sides.
Fig. 8. Measured L-I-V curves of (a) the FP laser and (b) the PC laser at a temperature of 25°C.
Fig. 9. (a) Measured HFF distribution of the FP laser. (b) Measured HFF distribution of the PC laser. (c) Calculated HFF distribution of the PC laser.
Fig. 10. Measured spectra of (a) the FP laser and (b) the PC laser.
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Ningning Chen, Peng Cao, Yingqiu Dai, Guangliang Sun, Zeyu Wang, Haodong Xuan, Hailing Wang, Wanhua Zheng, "High-power single-mode 1.3 µm semiconductor laser with a photonic crystal structure fabricated by standard lithography," Chin. Opt. Lett. 23, 081401 (2025)
Category: Lasers, Optical Amplifiers, and Laser Optics
Received: Jan. 16, 2025
Accepted: Apr. 2, 2025
Published Online: Jul. 15, 2025
The Author Email: Hailing Wang (hlwang07@semi.ac.cn), Wanhua Zheng (whzheng@semi.ac.cn)