[1] [1] UBUKATA A, SODABANLU H, AIHARA T, et al. High throughput MOVPE and accelerated growth rate of GaAs for PV application［J］. Journal of Crystal Growth, 2019, 509: 87-90.

[2] [2] RAVINDRAN S, DATTA A, ALAMEH K, et al. GaAs based long-wavelength microring resonator optical switches utilising bias assisted carrier-injection induced refractive index change［J］. Optics Express, 2012, 20(14): 15610-15627.

[3] [3] HUDAIT M K, ZHU Y, JOHNSTON S W, et al. Ultra-high frequency photoconductivity decay in GaAs/Ge/GaAs double heterostructure grown by molecular beam epitaxy［J］. Applied Physics Letters, 2013, 102(9): 093119.

[4] [4] DERENZO S, BOURRET E, HANRAHAN S, et al. Cryogenic scintillation properties of n-type GaAs for the direct detection of MeV/c2 dark matter［J］. Journal of Applied Physics, 2018, 123(11): 114501.

[6] [6] NARABADEESUPHAKORN P, THAINOI S, TANDAECHANURAT A, et al. Twin InSb/GaAs quantum nano-stripes: growth optimization and related properties［J］. Journal of Crystal Growth, 2018, 487: 40-44.

[7] [7] CAMENZIND L C, YU L, STANO P, et al. Hyperfine-phonon spin relaxation in a single-electron GaAs quantum dot［J］. Nature Communications, 2018, 9: 3454.

[8] [8] FENG C, ZHANG Y J, QIAN Y S, et al. High-efficiency AlxGa1-xAs/GaAs cathode for photon-enhanced thermionic emission solar energy converters［J］. Optics Communications, 2018, 413: 1-7.

[9] [9] XIAO T P, CHEN K F, SANTHANAM P, et al. Electroluminescent refrigeration by ultra-efficient GaAs light-emitting diodes［J］. Journal of Applied Physics, 2018, 123(17): 173104.

[10] [10] GHITA R V, LOGOFATU C, NEGRILA C, et al. Studies of ohmic contact and Schottky barriers on Au-Ge/GaAs and Au-Ti/GaAs［J］. Journal of Optoelectronics and Advanced Materials, 2005, 7(6): 3033-3037.

[11] [11] BRUCE R A, PIERCY G R. An improved Au-Ge-Ni ohmic contact to n-type GaAs［J］. Solid-State Electronics, 1987, 30(7): 729-737.

[12] [12] TAHAMTAN S, GOODARZI A, ABBASI S P, et al. Investigation on the effect of annealing process parameters on AuGeNi ohmic contact to n-GaAs using microstructural characteristics［J］. Microelectronics Reliability, 2011, 51(8): 1330-1336.

[13] [13] BACA A G, REN F, ZOLPER J C, et al. A survey of ohmic contacts to III-V compound semiconductors［J］. Thin Solid Films, 1997, 308/309: 599-606.