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Frontiers of Optoelectronics, Volume. 6, Issue 4, 429(2013)

Improvement of blue InGaN light-emitting diodes with gradually increased barrier heights from n- to p-layers

Wu TIAN, Xiong HUI*, Yang LI, Jiangnan DAI, Yanyan FANG, Zhihao WU, and Changqing CHEN
Author Affiliations
  • Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China
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    Wu TIAN, Xiong HUI, Yang LI, Jiangnan DAI, Yanyan FANG, Zhihao WU, Changqing CHEN. Improvement of blue InGaN light-emitting diodes with gradually increased barrier heights from n- to p-layers[J]. Frontiers of Optoelectronics, 2013, 6(4): 429

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    Paper Information

    Category: RESEARCH ARTICLE

    Received: May. 13, 2013

    Accepted: Jun. 24, 2013

    Published Online: Mar. 3, 2014

    The Author Email: Xiong HUI (hsiung.hust@gmail.com)

    DOI:10.1007/s12200-013-0342-x

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology