Laser & Optoelectronics Progress, Volume. 59, Issue 13, 1302001(2022)

Theoretical Study of High-Order Harmonic Generation from Acceptor-Doped Semiconductor

Yanfeng Wang1 and Xiangyang Miao2、*
Author Affiliations
  • 1Department of Physics, Lvliang University, Lvliang033001, Shanxi , China
  • 2College of Physics and Information Engineering, Shanxi Normal University, Linfen 041004, Shanxi , China
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    Figures & Tables(3)
    One-dimensional periodic potentials and energy-band structures of undoped and acceptor-doped semiconductors. (a) One-dimensional periodic potentials; (b) energy-band structures
    High-order harmonic generation (HHG) spectra with different doping rates. Dotted lines show HHG spectra with doping rate of 0 (undoped) and solid lines show HHG spectra with different doping rates. (a) Doping rate is 0.016; (b) doping rate is 0.048; (c) doping rate is 0.111; (d) doping rate is 0.143
    TDPI images with different doping rates. (a) Doping rate is 0 (undoped); (b) doping rate is 0.143
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    Yanfeng Wang, Xiangyang Miao. Theoretical Study of High-Order Harmonic Generation from Acceptor-Doped Semiconductor[J]. Laser & Optoelectronics Progress, 2022, 59(13): 1302001

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    Paper Information

    Category: Atomic and Molecular Physics

    Received: Aug. 23, 2021

    Accepted: Sep. 10, 2021

    Published Online: Jun. 9, 2022

    The Author Email: Xiangyang Miao (sxxymiao@126.com)

    DOI:10.3788/LOP202259.1302001

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