Laser & Optoelectronics Progress, Volume. 59, Issue 13, 1302001(2022)
Theoretical Study of High-Order Harmonic Generation from Acceptor-Doped Semiconductor
Fig. 1. One-dimensional periodic potentials and energy-band structures of undoped and acceptor-doped semiconductors. (a) One-dimensional periodic potentials; (b) energy-band structures
Fig. 2. High-order harmonic generation (HHG) spectra with different doping rates. Dotted lines show HHG spectra with doping rate of 0 (undoped) and solid lines show HHG spectra with different doping rates. (a) Doping rate is 0.016; (b) doping rate is 0.048; (c) doping rate is 0.111; (d) doping rate is 0.143
Fig. 3. TDPI images with different doping rates. (a) Doping rate is 0 (undoped); (b) doping rate is 0.143
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Yanfeng Wang, Xiangyang Miao. Theoretical Study of High-Order Harmonic Generation from Acceptor-Doped Semiconductor[J]. Laser & Optoelectronics Progress, 2022, 59(13): 1302001
Category: Atomic and Molecular Physics
Received: Aug. 23, 2021
Accepted: Sep. 10, 2021
Published Online: Jun. 9, 2022
The Author Email: Xiangyang Miao (sxxymiao@126.com)