[1] [1] B. Pederson,B. A. Thompson,S. Zemon et al.. Power requirements for erbium-doped fiber amplifiers pumped in the 800,980,1480 nm bands[J]. IEEE Photon. Technol. Lett.,1992,4(1):46-49

[2] [2] S. Nikolov,L. Wetenkamp. Single frequency diode-pumped erbium lasers at 1.55 and 1.64 μm[J]. Electron. Lett.,1995,31(9):731-733

[3] [3] J. B. Roman,P. Camy,M. Hempstead et al.. Ion exchange Er/Yb waveguide laser at 1.5 μm pumped by laser diode[J]. Electron. Lett.,1995,31(16):1345-1346

[4] [4] Mei Suisheng. Progress of super sigh efficiency diode source reseach[J]. Laser ＆ Optoelectronics Progress,2005,42(11):2-8

[5] [5] S. Q. Slipchenko,A. V. Lyutetski,N. A. Pikhtin. Low-threshold-current 1.2-1.5 μm laser diodes based on AlInGaAs/InP[J]. Technol. Phys. Lett.,2003,29(2):115-120

[6] [6] G. Erbert,F. Bugge,A. Knigge et al.. Highly reliable 75 W InGaAs /AlGaAs laser bars with over 70% conversion efficiency[C]. SPIE,2006,6133:61330B

[7] [7] M. Kanskar,T. Earles,T. J. Goodnough et al.. High power conversion Al-free diode laser for pumping high power solid state laser[C]. SPIE,2005,5738:47-56

[8] [8] D. Botez,L. J. Mawsl,A. Bhattacharya et al.. 66% CW wallplug efficiency from Al-free 0.98 μm emiting diode laser[J]. Electron. Lett.,1996,32(21):2012-2013

[9] [9] E. G. Golikova,I. V. Kureshov,V. M. Lantratov. Separately bounded InGaAsP high-power laser heterostructures obtained by VPE of organ metallic compounds[J]. Technol. Phys. Lett.,2000,26(3):913-916

[10] [10] Wang Jun,Bai Yiming,Chong Feng et al.. High power laser diode array with 60% electro-optical efficiency[J]. Chinese J. Lasers,2008,35(9):1323-1327

[11] [11] I. B. Petrescu-Prahova,T. Moritz,J. Riordan. High brightness 810 nm long cavity diode lasers with high d/Г ratio in asymmetric low confinement epitaxial structure[C]. Proc. 2001 IEEE/LEOS Annual Meeting,2001,1:135-136

[12] [12] B. S. Ryvkin,E. A. Avrutin. Free-carrier absorption and active layer heating in large optical cavity high-power diode lasers[J]. J. Appl. Phys.,2006,100(10):2310-2318

[13] [13] M. Peters,V. Rossin,Bruno. High-efficiency high-reliability laser diodes at JDS Uniphase[C]. SPIE,2005,5711:142-151

[14] [14] D. P. Bour,Rosen. A optimum cavity length for high conversion efficiency quantum well diode lasers[J]. J. Appl. Phys. 1989,66(7):2813-2819

[15] [15] E. D. Palik. Handbook of Optical Constants of Solids[M]. Orlando:Academic Press 1985. 385-400

[16] [16] Zhong Li,Wang Jun,Feng Xiaoming et al.. 808 nm High-power Al-free active region with asymmetric-waveguide structure lasers[J]. Chinese J. Lasers,2007,34(8):1037-1041

[17] [17] N. C. Casey,M. B. Panish. Heterostructure Lasers[M]. New York:Academic Press,1978. 202-248

[18] [18] N. A. Pikhtin,S. O. Slipchenko,Z. N. Sokolova et al.. Internal optical loss in semiconductor lasers[J]Semcond.,2004,38(3):374-380