A fabrication method of ring resonator based on anode bonding was designed to simplify the fabrication process of ring electrostatic gyro resonator. Silicon-based ring gyro resonators were fabricated using SOI with (100) and (111) top layers of silicon by anode bonding process. The generation of frequency splitting and its influence on gyro performance were analyzed theoretically. Meanwhile, the influence of crystal orientation on the double-and third-antinode mode was analyzed by software simulation. The matching degree of the double-and third-antinode operating modes with each crystal orientation was discussed. The amplitude-frequency response characteristics of the two devices were obtained by using network analyzer in vacuum chamber. The electrostatic force tuning method was illustrated to show how mode-matched operation can be done by adjusting dc voltages to get a new resonant frequency of (111) silicon-based ring gyro resonators..