Photonics Research, Volume. 9, Issue 4, 432(2021)
Realization of directional single-mode lasing by a GaN-based warped microring
Fig. 1. (a) Schematic of the epitaxial layer structure. (b) Formation of strain-induced warped microring. (c) Fabrication process of the warped microring.
Fig. 2. SEM images of (a) warped 40 μm microdisk and (b) warped 40 μm microring.
Fig. 3. PL spectra of (a) warped microdisk without a hole and (b) warped microring with an off-centered hole under different pumping power densities.
Fig. 4. FWHM and PL intensity of the warped microdisk without hole (red triangle) and with an off-centered hole (black square) along the excitation power density.
Fig. 5. (a) Relationship of PL intensity of the laser mode at 441.3 nm with the detection angle. The angle (
Fig. 6. (a) Illustration of the simulation model with four individual planes placed at different heights on the warped microring. (b) Calculated electric fields distribution of the first-order WGM and higher-order WGM in the warped membrane, respectively. (c) Calculated resonance wavelength of the warped membrane.
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Shengnan Zhang, Yufeng Li, Peng Hu, Zhenhuan Tian, Qiang Li, Aixing Li, Ye Zhang, Feng Yun, "Realization of directional single-mode lasing by a GaN-based warped microring," Photonics Res. 9, 432 (2021)
Category: Optical Devices
Received: Oct. 30, 2020
Accepted: Jan. 18, 2021
Published Online: Mar. 12, 2021
The Author Email: Yufeng Li (yufengli@mail.xjtu.edu.cn), Feng Yun (fyun2010@mail.xjtu.edu.cn)