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Journal of Synthetic Crystals, Volume. 52, Issue 9, 1641(2023)

Influence Mechanism of Crucible Rotation Rates on the Flow Field and Oxygen Concentration of the Semiconductor-Grade Czochralski Monocrystalline Silicon Melt under Transverse Magnetic Field

WANG Liguang1、*, RUI Yang1, SHENG Wang2, MA Yinshuang1, MA Cheng1, CHEN Weinan2, ZOU Qipeng2, DU Pengxuan3, HUANG Liuqing2,4, and LUO Xuetao2,4
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  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
  • 4[in Chinese]
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    WANG Liguang, RUI Yang, SHENG Wang, MA Yinshuang, MA Cheng, CHEN Weinan, ZOU Qipeng, DU Pengxuan, HUANG Liuqing, LUO Xuetao. Influence Mechanism of Crucible Rotation Rates on the Flow Field and Oxygen Concentration of the Semiconductor-Grade Czochralski Monocrystalline Silicon Melt under Transverse Magnetic Field[J]. Journal of Synthetic Crystals, 2023, 52(9): 1641

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    Paper Information

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    Received: Feb. 13, 2023

    Accepted: --

    Published Online: Oct. 7, 2023

    The Author Email: WANG Liguang (wanglg@ftwafer.com)

    DOI:

    CSTR:32186.14.

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology