Journal of Infrared and Millimeter Waves, Volume. 42, Issue 1, 21(2023)

Monolithic master oscillator high efficiency diode laser with nearly diffraction-limited narrowband emission and 10 W of optical output power

Wei-Chuan DU1,2, Lin-An HE1,2, Yi LI1,2, Yu-Wen HE1,2, Peng-Fei XIE1,2, Kun ZHOU1,2、*, Liang ZHANG1,2, Sheng-Zhe LIU1,2, Song-Xin GAO1,2, and Chun TANG1,2、**
Author Affiliations
  • 1Key Laboratory of Science and Technology on High Energy Lasers,CAEP,Mianyang 621900,China
  • 2Institute of Applied Electronics,CAEP,Mianyang 621900,China
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    References(13)

    [1] QIAO Yan-Bin, CHEN Yan-Ning, ZHAO Dong-Yan et al. Thermal crosstalk characteristics in high-power 808 nm AlGaAs/GaAs laser diode bars[J]. J. Infrared Millim. Waves, 34, 10-13(2015).

    [2] LI Te, HAO Er-Juan, LI Zai-Jin et al. Optimization of waveguide structure for high power 1 060 nm diode laser[J]. J. Infrared Millim. Waves, 31, 226-230(2012).

    [4] LANG Xing-Kai, JIA Peng, QIN Li et al. 980 nm high-power tapered semiconductor laser with high order gratings[J]. J. Infrared Millim. Waves, 40, 721-724(2021).

    [5] Sumpf B, Wenzel H, Erbert G. High-power high-brightness semiconductor tapered diode lasers for the red and near infrared spectral range[C], 7616, 76161L(2010).

    [6] Müller A, Fricke J, Bugg F et al. DBR tapered diode laser with 12.7 W output power and nearly diffraction-limited, narrowband emission at 1 030 nm[J]. Applied Physics B, 4, 87(2016).

    [7] Zink C, Maiwald M, Wenzel H et al. Monolithic Master Oscillator with Tapered Power Amplifier Diode Laser at 1060 nm with Additional Control Section for High Power Operation[C](2019).

    [8] Sumpf B, Paschke K, Kudryashov A V et al. Spectrally stabilized high-power high-brightness DBR-tapered lasers in the VIS and NIR range[C], 10518, 1051817(2018).

    [9] Albrodt P, Jamal M T, Hansen A K et al. Recent progress in brightness scaling by coherent beam combining of tapered amplifiers for efficient high power frequency doubling[C], 10900, 109000O(2019).

    [10] Paschke K, Blume G, Pohl J et al. Reliable high-spectral-radiance 635 nm tapered diode lasers with monolithically integrated distributed Bragg reflector[C], 11262, 112620L(2020).

    [11] Wang Xiaozhuo, Erbert G, Wenzel H et al. 17 W Near-Diffraction-Limited 970 nm Output From a Tapered Semiconductor Optical Amplifier[J]. IEEE photonics technology letters, 2, 115-118(2013).

    [12] Christof Z, Maabdorf A, Fricke J et al. Monolithic Master Oscillator Tilted Tapered Power Amplifier Emitting 9.5 W at 1060 nm[J]. IEEE photonics technology letters, 32, 59-62(2020).

    [13] Zhou Kun, Du Weichuan, Li Yi et al. Suppression of higher-order modes in a large-optical-cavity waveguide structure for high-power high-efficiency 976 nm diode laser[J]. Superlattices and Microstructures, 129, 40-46(2019).

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    Wei-Chuan DU, Lin-An HE, Yi LI, Yu-Wen HE, Peng-Fei XIE, Kun ZHOU, Liang ZHANG, Sheng-Zhe LIU, Song-Xin GAO, Chun TANG. Monolithic master oscillator high efficiency diode laser with nearly diffraction-limited narrowband emission and 10 W of optical output power[J]. Journal of Infrared and Millimeter Waves, 2023, 42(1): 21

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    Paper Information

    Category: Research Articles

    Received: Jan. 14, 2022

    Accepted: --

    Published Online: Feb. 23, 2023

    The Author Email: Kun ZHOU (17764988391@163.com), Chun TANG (tangchun21@caep.cn)

    DOI:10.11972/j.issn.1001-9014.2023.01.004

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