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Chinese Journal of Lasers, Volume. 46, Issue 2, 0211005(2019)

Effects of Ar Plasma Treatment on Photoluminescence Properties of GaAs Nanowires

Mei Gao1、*, Haolin Li1, Dengkui Wang1、*, Xinwei Wang2, Xuan Fang1, Dan Fang1, Jilong Tang1, Xiaohua Wang1, and Zhipeng Wei1
Author Affiliations
  • 1 State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology, Changchun, Jilin 130022, China
  • 2 School of Materials Science and Engineering, Changchun University of Science and Technology, Changchun, Jilin 130022, China
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    Mei Gao, Haolin Li, Dengkui Wang, Xinwei Wang, Xuan Fang, Dan Fang, Jilong Tang, Xiaohua Wang, Zhipeng Wei. Effects of Ar Plasma Treatment on Photoluminescence Properties of GaAs Nanowires[J]. Chinese Journal of Lasers, 2019, 46(2): 0211005

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    Paper Information

    Category: spectroscopy

    Received: Sep. 19, 2018

    Accepted: Nov. 19, 2018

    Published Online: May. 9, 2019

    The Author Email:

    DOI:10.3788/CJL201946.0211005

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology