Chinese Journal of Lasers, Volume. 31, Issue s1, 462(2004)
Effect of Substrate Temperature on the Structure of Crystallization and Transfer Rate of ZnO Thin Film
[1] [1] C. Klingshirm. The luminescence of ZnO under high one-and two-quantum excitation[J]. Phys. Stat. Sol. B, 1975, 71(2): 547-559
[2] [2] Ζ, K. Tang, P. Zu. Room temperature ultravioler laser emission from microstructured ZnO thin film [J]. Nonlinear Opt., 1997, 18(1):355-359
[3] [3] D. M. Bagnall, Y. F. Chen. High temperature excitonic stimulated emission from ZnO epitaxial layers [J]. Appl. Phys. Lett., 1998, 73(8): 1038-1040
[4] [4] Ζ Κ Tang, G. Κ L Wong. Room-temperature ultraviolet laser emission from self-assembled ZnO microcrystaliite thin films [J]. Appl. Phys. Lett., 1998, 72(25): 3270-3275
[5] [5] L. X. Yi, Z. Xu. The ultraviole and blue luminescence properties of ZnO: Zn thin film [J]. Chinese Science Bulletin, 2001, 46(1): 1223-1226
[6] [6] P. Yu, Ζ. Κ Tang. Room-temperature gain spectra and lasing in microciystalline ZnO thin film [J]. Cryst Growth, 1998, 184(2): 601-605
[7] [7] D. M. Bagnall, Y. F. Chen. Optically pumped lasing of ZnO at room temperature [J]. Appl. Phys. Lett., 1997,70(17):2230-2232
Get Citation
Copy Citation Text
PAN Zhi-feng, YUAN Yi-fang, KONG Fan-zhi. Effect of Substrate Temperature on the Structure of Crystallization and Transfer Rate of ZnO Thin Film[J]. Chinese Journal of Lasers, 2004, 31(s1): 462
Category: laser devices and laser physics
Received: --
Accepted: --
Published Online: Jan. 29, 2013
The Author Email: Zhi-feng PAN (panzf3780@sina.com.cn)
CSTR:32186.14.