Thermal phase change and activation energy of crystallization of Ge-Sb-Te-Sn thin films

Sipeng Gu; Lisong Hou; Qitao Zhao; Rui’an Huang

Chinese Optics Letters, Volume. 1, Issue 12, 12716(2003)

Sipeng Gu^1,2、*, Lisong Hou¹, Qitao Zhao¹, and Rui’an Huang¹

Author Affiliations

¹Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800

²Department of Physics, New Jersey Institute of Technology, Newark, NJ 07102, USA

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References(7)

[1] [1] T. H. Jeong, M. R. Kim, and H. Seo, J. Appl. Phys. 8979, 774 (1999).

[2] [2] M. R. Kim, H. Seo, and T. H. Jung, Proc. SPIE 3401, 259 (1998).

[3] [3] C.-M. Lee, T.-S. Chin, and Y.-Y. Huang, Jpn. J. Appl. Phys 39, 6369 (2000).

[4] [4] F. X. Gan, L. S. Hou, and G. B. Wang, Mat. Sci. and Eng. B 76, 63 (2000).

[5] [5] F. S. Jiang and M. Okuda, Jpn. J. Appl. Phys. 30, 97 (1991).

[6] [6] H. F. Hu, F. Y. Lin, and Y. B. Yuan, J. Non-Cryst. Solids 112, 306 (1989).

[7] [7] H. Yinnon and D. R. Uhlmann, J. Non-Cryst. Solids 54, 253 (1983).

CLP Journals

[1] [in Chinese], [in Chinese], [in Chinese]. Structure and Optical Property Changes of Heat Induced NiO_xThin Films[J]. Chinese Journal of Lasers, 2007, 34(1): 125

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Sipeng Gu, Lisong Hou, Qitao Zhao, Rui’an Huang, "Thermal phase change and activation energy of crystallization of Ge-Sb-Te-Sn thin films," Chin. Opt. Lett. 1, 12716 (2003)

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Paper Information

Category: OPTICAL DATA STORAGE

Received: Jun. 17, 2003

Accepted: --

Published Online: Jun. 6, 2006

The Author Email: Sipeng Gu (spgu@siom.ac.cn)

DOI:

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology